[1]袁 勇,等.主功率端子压接技术在IGBT 模块高集成设计中的应用研究[J].控制与信息技术(原大功率变流技术),2017,(01):39-44.[doi:10.13889/j.issn.2095-3631.2017.01.008]
 YUAN Yong,XIONG Hui,et al.Research on Pressure-contact Technology of Power Terminals for the Design of High-integration IGBT Module[J].High Power Converter Technology,2017,(01):39-44.[doi:10.13889/j.issn.2095-3631.2017.01.008]
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主功率端子压接技术在IGBT 模块高集成设计中的应用研究()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年01期
页码:
39-44
栏目:
电力电子器件
出版日期:
2017-02-05

文章信息/Info

Title:
Research on Pressure-contact Technology of Power Terminals for the Design of High-integration IGBT Module
文章编号:
2095-3631(2017)01-0039-06
作者:
袁 勇1 2熊 辉1 2黄 南1 2陈燕平1 2忻 力3
(1. 新型功率半导体器件国家重点实验室,湖南 株洲 412001; 2. 株洲中车时代电气股份有限公司,湖南 株洲 412001;3. 中车株洲所电气技术与材料工程研究院,湖南 株洲 412001)
Author(s):
YUAN Yong 1 2 XIONG Hui 12 HUANG Nan 12CHEN Yanping 12 XIN Li 3
(1.State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001, China; 2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China; 3. CRRC ZIC Research Institute of Electrical Technology & Material Engineering, Zhuzhou, Hunan 412001, China)
关键词:
IGBT 模块压接阻抗分布参数一致性热性能
Keywords:
IGBT module pressure-contact impendence distribution parameter consistency thermal performance
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2017.01.008
文献标志码:
A
摘要:
文章简要阐述了压接式IGBT 模块封装技术原理。为了实现IGBT 模块的高度集成,对主功率端子压接工艺对模块阻抗特性、模块并联应用及热性能的影响进行了研究,提出一种IGBT 模块主功率端子与衬板压接载流设计方案并介绍了其关键技术。仿真与实验结果验证了主功率端子压接技术在IGBT 模块产品开发及应用中的有效性。
Abstract:
It briefly introduced the package principle of pressure-contact IGBT devices. In order to achieve high-integration of IGBT module, the effect of pressure-contact technology on its impendence characteristic, parallel application and thermal performance was studied. A design scheme of press-contact IGBT device with elastic main power terminals was proposed and its key technology was described. Simulation and experimental results verified the efficiency of press-contact technology in IGBT module design and engineering application.

参考文献/References:

[1]蒋云富,黄南,袁勇,等. 集成式IGBT 功率组件的现状及发展趋势[J]. 大功率变流技术,2015(3):1-6.
  JIANG Y F, HUANG N, YUAN Y, et al. Status and Development Trends of Integrated IGBT Power Assembly[J]. High Power Converter Technology,2015(3):1-6.
[2]张明. 现代电力电子集成技术综述[J]. 大功率变流技术, 2016(1):1-7. ZHANG M. Overview of Modern Power Electronics Integration Technology[J]. High Power Converter Technology, 2016(1): 1-7.
[3]吴义伯,戴小平,王彦刚,等. IGBT 功率模块封装中先进互连技术研究进展[J]. 大功率变流技术,2015(2):6-10.
  WU Y B, DAI X P, WANG Y G, et al. State of the Progress of Advanced Interconnection Technology for IGBT Power Module Packaging[J]. High Power Converter Technology,2015(2): 6-10.
[4]窦泽春,刘国友,陈俊,等. 大功率压接式IGBT 器件设计与关键技术[J]. 大功率变流技术,2016(2):21-25.
  DOU Z C, LIU G Y, CHEN J, et al. Design and Key Technologies of High-power Press-pack IGBT Device[J]. High Power Converter Technology,2016(2):21-25.
[5]POLLER T, BASLER T, HERNES M, et al. Mechanical analysis of press-pack IGBTs[J]. Microelectronics Reliability,2012, 52(9): 2397-2402.
[6]王勇. 智能功率模块可靠性的有限元仿真研究[D]. 上海交通大学,2015. WANG Y. Research on Intelligent Power Module Reliability with Fea-Method[D]. Shanghai Jiaotong University,2015.
[7]祁善军, 翁星方, 宋文娟, 等. 大功率IGBT 模块并联均流特性研究[J]. 大功率变流技术,2011(6):10-14.
   QI S J, WENG X F, SONG W J, et al. Research on Even Flow of 2017 年第1 期 High-power IGBT Module in Parallel[J]. High Power Converter Technology,2011(6):10-14.
[8]袁立强 ,赵争鸣,宋高升,等. 电力半导体器件原理与应用[M]. 机械工业出版社,2011.
[9]丁杰,唐玉兔,忻力,等. IGBT 模块封装的热性能分析[J]. 机车电传动,2013(2):9-12.
   DING J,TANG Y T,XIN L, et al. Thermal Performance Analysis of IGBT Module Packaging [J] Electric Drive for Locomotives, 2013(2):9-12.
[10]吴煜东,常桂钦,彭勇殿,等. 焊层空洞对IGBT 模块热应力的影响[J]. 大功率变流技术,2014(1):17-23.
   WU Y D,CHANG G Q,PENG Y D, et al. Effect of Solder Voids on IGBT Thermal and Stress Performance[J]. High Power Converter Technology,2014(1):17-23.
[11]奉琴,李世平,陈彦,等. 基于结构函数的大功率IGBT 热阻测量方法[J]. 大功率变流技术,2015(3):39-41.
   FENG Q, LI S P, CHEN Y, et al.Measurement Method of IGBT Thermal Resistance Based on Structure Function[J]. High Power Converter Technology,2015(3):39-41.

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备注/Memo

备注/Memo:
收稿日期:2016-11-10
作者简介:袁勇(1989-),男,硕士,工程师,主要从事集成式功率半导体组件的开发及应用技术研究工作。
更新日期/Last Update: 2017-02-28