[1]王 俊,张 渊,李宗鉴,等. SiC GTO 晶闸管技术现状及发展[J].控制与信息技术(原大功率变流技术),2016,(05):7-12.[doi:10.13889/j.issn.2095-3631.2016.05.100]
 WANG Jun,ZHANG Yuan,LI Zongjian,et al. Technology Status and Development of SiC GTO Thyristor[J].High Power Converter Technology,2016,(05):7-12.[doi:10.13889/j.issn.2095-3631.2016.05.100]
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 SiC GTO 晶闸管技术现状及发展()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年05期
页码:
7-12
栏目:
综述·评论
出版日期:
2016-10-05

文章信息/Info

Title:
 Technology Status and Development of SiC GTO Thyristor
文章编号:
2095-3631(2016)05-0007-06
作者:
 王 俊张 渊李宗鉴邓林峰
 (湖南大学 电气与信息工程学院,湖南 长沙 410082)
Author(s):
 WANG Jun ZHANG Yuan LI Zongjian DENG Linfeng
 (College of Electrical and Information Engineering,Hunan University, Changsha ,Hunan 410082, China)
关键词:
 碳化硅门极可关断晶闸管阻断电压发射极关断晶闸管载流子寿命
Keywords:
 SiC gate turn-off thyristors (GTO) breakdown voltage emitter gate turn-off thyristors (ETO) carrier lifetime
分类号:
TN34
DOI:
10.13889/j.issn.2095-3631.2016.05.100
文献标志码:
A
摘要:
 近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件的迅速发展。在SiC 高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO 在衬底材料、外延材料、载流子寿命和阻断电压等方面近十几年的发展历程和现状;介绍了具有改良SiC GTO开关特性的碳化硅发射极关断晶闸管(SiC ETO)特性及其结构和原理;分析了6 500 V SiC ETO 的正向导通特性和阻断特性,并通过实验验证了其快速关断特性。最后从器件及其应用的角度提出了SiC GTO 晶闸管技术未来发展的方向。
Abstract:
 In recent years, high-voltage power devices based on wide-band gap semiconductor material such as silicon carbide (SiC)have developed rapidly. Among high voltage SiC power devices, gate turn-off thyristor (GTO) has advantages such as high blocking voltage, high current , fast turn-off, low forward voltage drop, high temperature resistance, etc. It mainly elaborated the development history and status of SiC GTO in terms of substrate materials, epitaxial materials, carrier lifetime, blocking voltage and so on, introduced silicon carbide emitter turn-off thyristor(SiC ETO) with improved switching characteristics of SiC GTO, and analyzed the on-state and blocking characteristic of 6 500 V SiC ETO. Experimental results demonstrated the fast turn-off characteristic of ETO. In the end, it prespected the research and development of SiC GTO thyristor technology from device and its application.

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备注/Memo

备注/Memo:
收稿日期:2016-05-09
作者简介:王俊(1979-),男,教授,博士生导师,研究方向为功率半导体器件开发与应用。
基金项目:国家自然科学基金(51577054)
更新日期/Last Update: 2016-09-30