[1]江冰松,唐龙谷.应力对 IGBT 电性能的影响及应力来源研究[J].控制与信息技术,2015,(02):67-70.[doi:10.13889/j.issn.2095-3631.2015.02.014]
 JIANG Bingsong,TANG Longgu.Research on the Effect of Stress on IGBT Electrical Characteristics and the Source of Stress[J].High Power Converter Technology,2015,(02):67-70.[doi:10.13889/j.issn.2095-3631.2015.02.014]
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应力对 IGBT 电性能的影响及应力来源研究()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年02期
页码:
67-70
栏目:
电力电子器件
出版日期:
2015-04-05

文章信息/Info

Title:
Research on the Effect of Stress on IGBT Electrical Characteristics and the Source of Stress
文章编号:
2095-3631(2015)02-0067-04
作者:
江冰松唐龙谷
1. 株洲南车时代电气股份有限公司
2. 电力电子器件湖南省重点实验室
Author(s):
JIANG Bingsong TANG Longgu
1.Zhuzhou CSR Times Electric Co.,Ltd, 2. Key Laboratory of Power Electronics of Hunan Province,
关键词:
IGBT机械应力热应力形变势
Keywords:
IGBT mechanical stress thermal stress deformation potential theory
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2015.02.014
文献标志码:
A
摘要:
基于形变势理论,分析了应力下硅基半导体的禁带变窄效应和迁移率增强效应。建立了IGBT 芯片模型,研究了应力对IGBT 电性能的影响,分析了IGBT 的应力来源,可为IGBT 应力控制提供一定的参考。
Abstract:
Based on the deformation potential theory, it analyzed the band gap narrowing effect and mobility enhancement effect of silicon-base device under stress. The effect of the stress on electrical characteristics of the IGBT was studied with the IGBT chip model building, and the source of stress was also analyzed. It is beneficial to guide the stress control of IGBT.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2014-11-23
作者简介:江冰松(1979-),男,工程师,主要从事功率半导体器件技术研究。
更新日期/Last Update: 2016-01-06