[1]王彦刚,戴小平,吴义伯,等.IGBT 模块功率损耗的产生机理、计算及模拟[J].控制与信息技术(原大功率变流技术),2015,(02):62-66.[doi:10.13889/j.issn.2095-3631.2015.02.013]
 WANG Yangang,DAI Xiaoping,WU Yibo,et al.The Mechanism, Calculation and Simulation of Power Loss for IGBT Modules[J].High Power Converter Technology,2015,(02):62-66.[doi:10.13889/j.issn.2095-3631.2015.02.013]
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IGBT 模块功率损耗的产生机理、计算及模拟()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年02期
页码:
62-66
栏目:
电力电子器件
出版日期:
2015-04-05

文章信息/Info

Title:
The Mechanism, Calculation and Simulation of Power Loss for IGBT Modules
文章编号:
2095-3631(2015)02-0062-05
作者:
王彦刚戴小平吴义伯Jones Steve刘国友
株洲南车时代电气股份有限公司 功率半导体研发中心 (Lincoln 分中心),
Author(s):
WANG Yangang DAI Xiaoping WU Yibo JONES Steve LIU Guoyou
Power Semiconductor R&D Center(Lincoln), Zhuzhou CSR Times Electric Co., Ltd.,
关键词:
IGBT 模块续流二极管功耗效率结温
Keywords:
IGBT module FWD power loss efficiency junction temperature
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2015.02.013
文献标志码:
A
摘要:
分析了IGBT 模块功耗的来源,根据其导通和开关波形讨论了功耗的定义和计算方法;介绍了如何根据模块数据手册估算IGBT 及其续流二极管 (FWD) 的功耗,以及利用PSIM 软件模拟模块在应用系统中的功耗;分别利用基本公式和PSIM 软件模拟计算和比较了一个逆变电路中IGBT 模块的功耗和最高结温。
Abstract:
In this paper, the mechanism of IGBT power loss was analyzed, the definition and calculation of the power loss were discussed based on the characteristics of conduction and switching. The power loss of IGBT and FWD can be estimated by using the IGBT module datasheet, and be simulated by PSIM. Finally, the power loss and maximum junction temperature of IGBT module in an inverter circuit were calculated by equations and PSIM.

参考文献/References:

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[6]Calculation of junction temperature-Application note, AN4506[EB/OL].[2014-08-01]http://www. dynexpowersemiconductors.com/application-notes, Jul. 2002.
[7]Ciappa M, Carbognani F, Fichtner W. Lifetime prediction and design of reliability tests for high-power devices in automotive applications[J]. IEEE Transactions on Device Material Reliability, 2003:191-196.
[8]Ciappa M, Carbognani F, Cova P, et al. A novel thermomechanicsbased lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors[J]. Microelectronics Reliability, 2002,42:1653-1658.
[9]Industrial IGBT modules explanation of technical information[EB/OL].[2014-08-01]http:// www.infineon.com, 2011.
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[11]PSIM Software. IGBT loss calculation using the thermal module[C]//Powersim Inc, 2007.

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备注/Memo

备注/Memo:
收稿日期:2014-08-01
作者简介:王彦刚(1974-),男,博士,高级工程师, 目前主要从事新型功率模块的设计、封装、应用及可靠性分析等工作。
更新日期/Last Update: 2016-01-06