[1]Takayuki Kushima,Katsunori Azuma,Yasuhiro Nemoto,等.具有优化沟槽HiGT 结构的3.3 kV/1 800 A IGBT及其模块优化设计[J].控制与信息技术,2015,(02):52-56.[doi:10.13889/j.issn.2095-3631.2015.02.011]
 Takayuki Kushima,Katsunori Azuma,Yasuhiro Nemoto,et al.3.3 kV/1 800 A IGBT Module with Advanced Trench HiGT Structure and Its Module Design Optimization[J].High Power Converter Technology,2015,(02):52-56.[doi:10.13889/j.issn.2095-3631.2015.02.011]
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具有优化沟槽HiGT 结构的3.3 kV/1 800 A IGBT及其模块优化设计()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年02期
页码:
52-56
栏目:
电力电子器件
出版日期:
2015-04-05

文章信息/Info

Title:
3.3 kV/1 800 A IGBT Module with Advanced Trench HiGT Structure and Its Module Design Optimization
文章编号:
2095-3631(2015)02-0052-05
作者:
Takayuki KushimaKatsunori AzumaYasuhiro NemotoKatsuaki SaitoYoshihiko Koike
日立功率半导体器件株式会社
Author(s):
Takayuki KushimaKatsunori AzumaYasuhiro NemotoKatsuaki SaitoYoshihiko Koike
Hitachi Power Semiconductor Device Ltd
关键词:
3.3 kV/1 800 A IGBT优化沟槽HiGT准交错布局杂散电感寄生电感电极结构
Keywords:
3.3 kV/1 800 A IGBT advanced trench HiGT pseudo staggered arrangement stray inductance parastic inductance terminal structure
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2015.02.011
文献标志码:
A
摘要:
日立公司开发了具有最高电流等级的3.3kV/1800A IGBT 模块,其额定电流等级比现有同尺寸、同电压等级常规产品提高了20%。通过采用优化沟槽HiGT 结构,降低了器件功耗,同时优化了模块的电、热性能设计,降低了热阻以及寄生电感。
Abstract:
Hitachi developed a 3.3 kV/1 800 A IGBT module with the highest current rating, whose current rating would be increased by 20% compared with the conventional type products, which had the same size and voltage level. The advanced trench HiGT structure was used to achieve low loss, and the electrical and thermal designs were optimized in order to reduce thermal resistance and parasitic inductance.

参考文献/References:

[1]Nagel A, Bakran M M. Robustness Requirements on Semiconductors for High Power Applications[C]//15th European Conference on Power Electronics and Applications (EPE). Lille, 2013.
[2]Jones P S, Davidson C C. Calculation of Power Losses for MCCbased VSC HVDC Station[C]// 15th European Conference on Power Electronics and Applications (EPE). Lille, 2013.
[3]Mori M, Oyama K, Kohno Y,et al. A Trench-Gate High-Conductivity IGBT (HiGT) with Short-Circuit Capability[J].IEEE Transactions on Electron Devices, 2007,54(8):2011-2016.
[4]Arai T, Watanabe S, Ishibashi K, et al. The Advanced Trench HiGT with Separate Floating p-Layer for Easy Controllability and Robustness[C]//Proc. PCIM Europe. Nuremberg , 2011:329-335.
[5]Toyota Y, Wakagi M, Ishibashi K, et al. Novel 3.3-kV Advanced Trench HiGT with Low Loss and Low dv/dt Noise[C]// 25th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Kanazawa, 2013:29-36.
[6]Hitachi Power Semiconductor Device Co., Ltd.,. Application Manual for High Voltage IGBT Module[Z/OL]. 2009[2014-12-18]. http://www.hitachi-power-semiconductor-device.co.jp/en/product/igbt/attention.html.
[7]Lutz J, Shlangenotto H, Scheuermann U, et al. Semiconductor Power Devices-Physics, Characteristics, Reliability[M]. New York: Springer, 2011:421-426.
[8]Azuma K, Konno A, Yoshida I, et al. New 3.3kV IGBT Module with Low Power Loss and High Current Rating[C]//Proc. PCIM.Nuremberg , 2013:345-350.

备注/Memo

备注/Memo:
收稿日期:2014-09-02
作者简介:Takayuki Kushima(1980-),工程师,主要从事IGBT 产品研究和设计工作。
更新日期/Last Update: 2016-01-06