[1]赵振波,王 恒.三电平NPC 拓扑结构中功率IGBT 器件的应用和分析[J].控制与信息技术(原大功率变流技术),2015,(02):24-29.[doi:10.13889/j.issn.2095-3631.2015.02.005]
 ZHAO Zhenbo,WANG Heng.Application and Analysis of Power IGBT Device in Three-level NPC Topology[J].High Power Converter Technology,2015,(02):24-29.[doi:10.13889/j.issn.2095-3631.2015.02.005]
点击复制

三电平NPC 拓扑结构中功率IGBT 器件的应用和分析()
分享到:

《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年02期
页码:
24-29
栏目:
变流与控制
出版日期:
2015-04-05

文章信息/Info

Title:
Application and Analysis of Power IGBT Device in Three-level NPC Topology
文章编号:
2095-3631(2015)02-0024-06
作者:
赵振波1王 恒2
1. 英飞凌科技( 中国) 有限公司;
2. 英飞凌集成电路( 北京) 有限公司
Author(s):
ZHAO Zhenbo1WANG Heng2
1.Infineon Technology China Co., Ltd.,
2. Infineon Integrated Circuit(Beijing) Co., Ltd.,
关键词:
三电平拓扑IGBT换流回路直流母线电压杂散电感结温均流对称结构
Keywords:
three-level topology IGBT commutation circuit DC-link voltage stray inductance junction temperature current sharing symmetrical layout
分类号:
TM464+.22 ;TN32
DOI:
10.13889/j.issn.2095-3631.2015.02.005
文献标志码:
A
摘要:
讨论了三电平NPC 拓扑结构的基本工作原理和相应的换流路径;考虑到IGBT 模块对直流电压稳定性的要求, 给出在给定故障率条件下允许长期运行的最大直流母线电压;分析了器件芯片技术及封装的特点,给出了在三电平应用中的IGBT 解决方案;以4.5kV IGBT 为例,研究了三电平拓扑布局应用中杂散电感及结温差异所引起的开关特性问题,并提出一些在三电平设计中关于IGBT 模块均流和布局应用方面的建议。
Abstract:
It discussed the basic working principles of three-level topology as well as its corresponding commutation loops, defined the maximum DC-link voltage in continuous operation with given FIT curves by considering reliability requirements, and brought up a solution of three-level topology with IGBT modules by analyzing its chip technologies and housing features. Taking 4.5kV IGBT as an example, it studied the different switching characteristics caused by kinds of stray inductances and junction temperature in three-level topology, and proposed some suggestions about current sharing and symmetric layout of inverter design.

参考文献/References:

[1]Schuetze T. A 4.5 kV IGBT/Diode chip set for HVDC transmissionapplication[Z/OL]. 2014-10-25[2014-12-30]. http://www.powersystem.com.
[2]Bayeer R. Power Circuit Design for Clean Switching[C]//The 6th International Conference on Integrated Power Electronics Systems (CIPS), Nuremberg, 2010.
[3]Wu Jun. Development of a compact 750kVA three-phase NPC threelevel universal inverter module with specially design bus[C]//The 25th Annual IEEE on Applied Power Electronics Conference and Exposition (APEC). Palm Springs,CA,2010 .
[4] Infineon Technologies .An about the definition of FIT and MBTF[Z].Infineon Technologies,1999.
[5]Brückner T, Bernet S. Estimation and Measurement of Junction Temperatures in a Three-Level Voltage Source Converter[J].IEEE Transactions on Power Electronics, 2007,22(1):3-12.
[6]Zhang Xi, Jansen U. IGBT power modules utilizing new 650V IGBT3 and emitter controlled diode chips for three-level converter[Z/OL].[2014-12-30].http://Infineon-PCIM_2009_650 V_IGBT3_Modules-ED-v1.0-en.pdf?fileId=db3a30432ddc4fc8012ddc802720000e.
[7] 赵振波, 梁知宏. IGBT 并联设计参考[J]. 变频器世界,2008(12):73-75.
[8]赵争鸣,白华,张海涛,等. 三电平变频器中的IGBT 失效机理分析[J]. 电力电子,2004(5):30-34.
[9]王琛琛,李永东. 多电平变换器拓扑关系及新型拓扑[J]. 电工技术学报,2011(1):92-99.
[10]祝盼望,雷健升. 三种三电平NPC 变换器拓扑比较[J]. 变频器世界,2011(6):45-48.

相似文献/References:

[1]蒋云富,黄 南,袁 勇,等.集成式IGBT 功率组件的现状及发展趋势[J].控制与信息技术(原大功率变流技术),2015,(03):1.[doi:10.13889/j.issn.2095-3631.2015.03.001]
 JIANG Yunfu,HUANG Nan,YUAN Yong,et al.Status and Development Trends of Integrated IGBT Power Assembly[J].High Power Converter Technology,2015,(02):1.[doi:10.13889/j.issn.2095-3631.2015.03.001]
[2]丁 杰,张 平.电机控制器用IGBT 水冷散热器温升实验与热仿真[J].控制与信息技术(原大功率变流技术),2015,(03):23.[doi:10.13889/j.issn.2095-3631.2015.03.006]
 DING Jie,ZHANG Ping.Temperature-rise Test and Thermal Simulation for IGBT Water-cooled Radiator of Motor Controller[J].High Power Converter Technology,2015,(02):23.[doi:10.13889/j.issn.2095-3631.2015.03.006]
[3]黄 南,王世平,宋自珍.兆瓦级功率组件IGBT 失效研究[J].控制与信息技术(原大功率变流技术),2015,(03):35.[doi:10.13889/j.issn.2095-3631.2015.03.008]
 HUANG Nan,WANG Shiping,SONG Zizhen.Study of the IGBT Failure in Megawatt Power Assembly[J].High Power Converter Technology,2015,(02):35.[doi:10.13889/j.issn.2095-3631.2015.03.008]
[4]奉 琴,李世平,陈 彦,等.基于结构函数的大功率IGBT 热阻测量方法[J].控制与信息技术(原大功率变流技术),2015,(03):39.[doi:10.13889/j.issn.2095-3631.2015.03.009]
 FENG Qin,LI Shiping,CHEN Yan,et al.Measurement Method of IGBT Thermal Resistance Based on Structure Function[J].High Power Converter Technology,2015,(02):39.[doi:10.13889/j.issn.2095-3631.2015.03.009]
[5]夏一帆,王征宇,陈建明,等.基于ACPL-32JT 的电动汽车电机控制器 IGBT 驱动电路设计[J].控制与信息技术(原大功率变流技术),2015,(03):54.[doi:10.13889/j.issn.2095-3631.2015.03.013]
 XIA Yifan,WANG Zhengyu,CHEN Jianming,et al.Design of IGBT Drive Circuit for the Motor Controller of Electric Vehicle Based on ACPL-32JT[J].High Power Converter Technology,2015,(02):54.[doi:10.13889/j.issn.2095-3631.2015.03.013]
[6]吴义伯,戴小平,王彦刚,等.IGBT 功率模块封装中先进互连技术研究进展[J].控制与信息技术(原大功率变流技术),2015,(02):6.[doi:10.13889/j.issn.2095-3631.2015.02.002]
 WU Yibo,DAI Xiaoping,WANG Yangang,et al.State-of-the-art Progress of Advanced InterconnectionTechnology for IGBT Power Module Packaging[J].High Power Converter Technology,2015,(02):6.[doi:10.13889/j.issn.2095-3631.2015.02.002]
[7]李 云,朱世武,吴春冬,等.电动汽车电机控制器的发展[J].控制与信息技术(原大功率变流技术),2015,(02):12.[doi:10.13889/j.issn.2095-3631.2015.02.003]
 LI Yun,ZHU Shiwu,WU Chundong,et al.Development of the Motor Control Unit for Electric Vehicle[J].High Power Converter Technology,2015,(02):12.[doi:10.13889/j.issn.2095-3631.2015.02.003]
[8]焦明亮,李 云,朱世武,等.IGBT 门极驱动技术现状和发展趋势[J].控制与信息技术(原大功率变流技术),2015,(02):18.[doi:10.13889/j.issn.2095-3631.2015.02.004]
 JIAO Mingliang,LI Yun,ZHU Shiwu,et al.Status and Trend of IGBT Gate Drive Technology[J].High Power Converter Technology,2015,(02):18.[doi:10.13889/j.issn.2095-3631.2015.02.004]
[9]马龙昌,张东辉,杨 光,等.IGBT 并联应用技术研究[J].控制与信息技术(原大功率变流技术),2015,(02):35.[doi:10.13889/j.issn.2095-3631.2015.02.007]
 MA Longchang,ZHANG Donghui,YANG Guang,et al.Research on the IGBT Paralleling Application[J].High Power Converter Technology,2015,(02):35.[doi:10.13889/j.issn.2095-3631.2015.02.007]
[10]江冰松,唐龙谷.应力对 IGBT 电性能的影响及应力来源研究[J].控制与信息技术(原大功率变流技术),2015,(02):67.[doi:10.13889/j.issn.2095-3631.2015.02.014]
 JIANG Bingsong,TANG Longgu.Research on the Effect of Stress on IGBT Electrical Characteristics and the Source of Stress[J].High Power Converter Technology,2015,(02):67.[doi:10.13889/j.issn.2095-3631.2015.02.014]

备注/Memo

备注/Memo:
收稿日期:2014-12-30 作者简介:赵振波(1976-),男,高级主任工程师,主要从事功率IGBT 模块相关技术研究及市场推广工作。
更新日期/Last Update: 2016-01-06