[1]吴煜东,万正芬,彭勇殿.高压IGBT模块AlN覆铜衬板特性研究[J].控制与信息技术(原大功率变流技术),2012,(05):1-4.[doi:10.13889/j.issn.2095-3631.2012.05.001]
 WU Yu-dong,WAN Zheng-fen,PENG Yong-dian.The Investigation of Copper Metalized AlN for High Voltage IGBT Module[J].High Power Converter Technology,2012,(05):1-4.[doi:10.13889/j.issn.2095-3631.2012.05.001]
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高压IGBT模块AlN覆铜衬板特性研究()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2012年05期
页码:
1-4
栏目:
电力电子器件与应用
出版日期:
2012-10-05

文章信息/Info

Title:
The Investigation of Copper Metalized AlN for High Voltage IGBT Module
文章编号:
2095-3631(2012)05-0001-04
作者:
吴煜东万正芬彭勇殿
株洲南车时代电气股份有限公司
Author(s):
WU Yu-dongWAN Zheng-fenPENG Yong-dian
(Zhuzhou CSR Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
IGBT 模块AlN 覆铜衬板可焊性可键合性绝缘性
Keywords:
IGBT module copper metalized AlN solder-ability bonding-ability insulation
分类号:
TN405
DOI:
10.13889/j.issn.2095-3631.2012.05.001
文献标志码:
A
摘要:
根据高压IGBT 模块的应用需求,开展了对氮化铝(AlN)覆铜衬板特性的研究。主要验证了AlN 覆铜衬板的正面可焊性、背面可焊性、正面可键合性、衬板级绝缘性和模块级绝缘性,并对测试结果进行了分析讨论。
Abstract:
According to the application requirements of high voltage IGBT module, the properties of copper metalized AlN is investigated such as front-side solder-ability, back-side solder-ability, front-side bonding-ability, insulation of substrates and modules. The test results have been discussed and analyzed.

参考文献/References:

[1] Yoshitaka N, Kazunaga O, Fumihiko M, et al.高可靠性IGBT模块封装的设计[J]. 袁海斌,译.电力电子,2010(4): 62- 66.
 [2] William W S, Ronald P C. Power Electronic Modules Design and Manufacture[M]. New York: CRC Press LLC, 2005.
[3] Fabian J H, Hartmann S, Hamidi A. Analysis of Insulation Failure Modes in High Power IGBT Modules[C]//Industry Applications Conference, 2005: 799-805.
[4] Kluge W P, Gobrecht J. Directly Bonded Copper Metallization of AlN Substrate for Power Hybrids[C]//Material Research Society Symposia Proceedings. Boston, 1985:399-404.
 [5] Kurihara Y, Shigeru T, Satoru O, et al. Bonding Mechanism between Aluminum Nitride Substrate and Ag-Cu-Ti Solder[J]. Components, Packaging, and Manufacturing Technology, 1992, 15(3):361- 368.
 [6] Chamund D J, Coulbeck L, Newcombe R, et al. High Power Density IGBT Module for High Reliability Applications[C]//Power Electronics and Motion Control Conference, 2009: 274-280.
 [7] Ramy A, Florin U, Wai T N, et al. The Current Sharing Optimization of Paralleled IGBTs in a Power Module Tile Using a PSpice Frequency Dependent Impedance Model[J]. IEEE Transactions on Power Electronics, 2008, 23 (1): 206-217.
[8] 覃荣震,张泉. 大功率IGBT模块封装中的超声引线键合技术[J]. 大功率变流技术,2011(2): 22-25,48.

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备注/Memo

备注/Memo:
收稿日期:2012- 06- 05
 作者简介:吴煜东(1969- ),男,高级工程师,长期从事新型电力半导体器件的设计、制造、测试和管理工作。
更新日期/Last Update: 2016-11-29