[1]方杰,常桂钦,彭勇殿,等.基于ANSYS的大功率IGBT模块传热性能分析[J].控制与信息技术(原大功率变流技术),2012,(02):16-20.[doi:10.13889/j.issn.2095-3631.2012.02.002]
 FANG Jie,CHANG Gui-qin,PENG Yong-dian,et al.Thermal Performance Analysis of High-power IGBT Module Based on ANSYS[J].High Power Converter Technology,2012,(02):16-20.[doi:10.13889/j.issn.2095-3631.2012.02.002]
点击复制

基于ANSYS的大功率IGBT模块传热性能分析()
分享到:

《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2012年02期
页码:
16-20
栏目:
变流器·控制
出版日期:
2012-04-05

文章信息/Info

Title:
Thermal Performance Analysis of High-power IGBT Module Based on ANSYS
文章编号:
2095-3631(2012)02-0016-05
作者:
方杰常桂钦彭勇殿 李继鲁 唐龙谷
株洲南车时代电气股份有限公司
Author(s):
FANG Jie CHANG Gui-qin PENG Yong-dian LI Ji-lu TANG Long-gu
(Zhuzhou CSR Times Electric Co.,Ltd., Zhuzhou, Hunan 412001,China)
关键词:
IGBT 模块焊层厚度焊料基板厚度基板材料热分析有限元分析
Keywords:
IGBT module solder layer thickness solder baseplate thickness baseplate material thermal analysis finite element analysis
分类号:
TK124
DOI:
10.13889/j.issn.2095-3631.2012.02.002
文献标志码:
A
摘要:
利用ANSYS 有限元分析软件建立了IGBT 模块封装结构的三维有限元模型,分析了模块稳态工作条件下的温度场分布,研究了不同基板材料及厚度、不同焊层材料及厚度对模块散热性能的影响
Abstract:
A three-dimensional FEA model of IGBT module is constructed by utilizing finite element analysis of ANSYS. Temperature distribution of the model under steady condition is analyzed and effects of baseplate material and thickness, solder material and layer thickness on thermal conduction performance of IGBT module are studied.

参考文献/References:

[1] Fabis P M, Shun D, Win dischm ann H. Thermal modeling of diamond based power electronic package[C] //Fifteenth IEEE semi-thermal symposium. Northboro, 1999:98-104.
[2] Newcombe D R, Dinesh C, Bailey C, et al. Reliablity Metrics for IGBT Power Modules [C]// 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging. Xi’an, 2010:670-674.
[3] 陶文铨. 传热学[M] . 西安: 西北工业大学出版社, 2006.
[4] Mitic G, Degischer H P, Lefranc G, et al T.AlSiC composite materials in IGBT power modules[C]//Proc. PCIM’00 Conf., 2000: 3021-3027.
[5] Azzopardi S, Thebaud J M, Worigard E, et al. Al/SiC baseplate hybrid power modules: evaluation of the thermomechanical performances[C]// Proceedings of IEEE International Workshop on Integrated Power Packaging. Chicago, 1998:74-78.
[6] Zhiye Z Z, Calata J. Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metalized Substrate Interconnect Material[J]. IEEE Transactions on Components and Packaging Technologies,2006,29 (3): 589-593.

相似文献/References:

[1]陈明锋,雷万钧,付翀丽,等.T 型三电平结构SVG 的损耗研究[J].控制与信息技术(原大功率变流技术),2015,(04):56.[doi:10.13889/j.issn.2095-3631.2015.04.011]
 CHEN Mingfeng,LEI Wanjun,FU Chongli,et al.Research on the Loss of Three-level T-type Inverter in SVG[J].High Power Converter Technology,2015,(02):56.[doi:10.13889/j.issn.2095-3631.2015.04.011]
[2]王彦刚,戴小平,吴义伯,等.IGBT 模块功率损耗的产生机理、计算及模拟[J].控制与信息技术(原大功率变流技术),2015,(02):62.[doi:10.13889/j.issn.2095-3631.2015.02.013]
 WANG Yangang,DAI Xiaoping,WU Yibo,et al.The Mechanism, Calculation and Simulation of Power Loss for IGBT Modules[J].High Power Converter Technology,2015,(02):62.[doi:10.13889/j.issn.2095-3631.2015.02.013]
[3]方 杰,彭勇殿,窦泽春,等.高压IGBT 模块中AlN 衬板的局部放电特性研究[J].控制与信息技术(原大功率变流技术),2015,(05):38.[doi:10.13889/j.issn.2095-3631.2015.05.008]
 FANG Jie,PENG Yongdian,DOU Zechun,et al.Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module[J].High Power Converter Technology,2015,(02):38.[doi:10.13889/j.issn.2095-3631.2015.05.008]
[4]李世平,奉琴,陈彦,等.IGBT模块中续流二极管关断过程失效机理分析[J].控制与信息技术(原大功率变流技术),2014,(05):28.[doi:10.13889/j.issn.2095-3631.2014.05.006]
 LI Shiping,FENG Qin,CHEN Yan,et al.Analysis of Turn-off Failure Mechanism for the Freewheeling Diode in IGBT Module[J].High Power Converter Technology,2014,(02):28.[doi:10.13889/j.issn.2095-3631.2014.05.006]
[5]吴煜东,常桂钦,彭勇殿,等.焊层空洞对IGBT模块热应力的影响[J].控制与信息技术(原大功率变流技术),2014,(01):17.[doi:10.13889/j.issn.2095-3631.2014.01.015]
 WU Yu-dong,CHANG Gui-qin,PENG Yong-dian,et al.Effect of Solder Voids on IGBT Thermal and Stress Performance[J].High Power Converter Technology,2014,(02):17.[doi:10.13889/j.issn.2095-3631.2014.01.015]
[6]李 寒,曾 雄,徐凝华,等.超声扫描在IGBT 模块质量分析中的应用[J].控制与信息技术(原大功率变流技术),2016,(02):30.[doi:10.13889/j.issn.2095-3631.2016.02.007]
 LI Han,ZENG Xiong,XU Ninghua,et al.Application of Acoustic Scanning Technology in Quality Analysis of IGBT Module[J].High Power Converter Technology,2016,(02):30.[doi:10.13889/j.issn.2095-3631.2016.02.007]
[7]文 驰,李保国,熊 辉,等.IGBT 模块杂散电感分析与仿真[J].控制与信息技术(原大功率变流技术),2016,(04):30.[doi:10.13889/j.issn.2095-3631.2016.04.006]
 WEN Chi,LI Baoguo,XIONG Hui,et al.Analysis and Simulation of Stray Inductance of IGBT Module[J].High Power Converter Technology,2016,(02):30.[doi:10.13889/j.issn.2095-3631.2016.04.006]
[8]徐凝华,吴义伯,刘国友,等.混合动力/电动汽车用IGBT功率模块的最新封装技术[J].控制与信息技术(原大功率变流技术),2013,(01):1.[doi:10.13889/j.issn.2095-3631.2013.01.001]
 XU Ning-hua,WU Yi-bo,LIU Guo-you,et al.The Latest Packing Technology for IGBT Module in HEV/EV Application[J].High Power Converter Technology,2013,(02):1.[doi:10.13889/j.issn.2095-3631.2013.01.001]
[9]吴煜东,万正芬,彭勇殿.高压IGBT模块AlN覆铜衬板特性研究[J].控制与信息技术(原大功率变流技术),2012,(05):1.[doi:10.13889/j.issn.2095-3631.2012.05.001]
 WU Yu-dong,WAN Zheng-fen,PENG Yong-dian.The Investigation of Copper Metalized AlN for High Voltage IGBT Module[J].High Power Converter Technology,2012,(02):1.[doi:10.13889/j.issn.2095-3631.2012.05.001]
[10]袁 勇,等.主功率端子压接技术在IGBT 模块高集成设计中的应用研究[J].控制与信息技术(原大功率变流技术),2017,(01):39.[doi:10.13889/j.issn.2095-3631.2017.01.008]
 YUAN Yong,XIONG Hui,et al.Research on Pressure-contact Technology of Power Terminals for the Design of High-integration IGBT Module[J].High Power Converter Technology,2017,(02):39.[doi:10.13889/j.issn.2095-3631.2017.01.008]

备注/Memo

备注/Memo:
收稿日期:2012- 01 - 14
作者简介:方杰( 1 9 8 7 - ) ,男,从事大功率IGBT 模块封装技术的研究。
更新日期/Last Update: 2017-06-07