[1]邓孝祥,李 鹏,戴超凡,等.增强型GaN MOSFET 与Si MOSFET 在单相全桥逆变器中的性能比较[J].控制与信息技术(原大功率变流技术),2017,(06):48-51.[doi:10.13889/j.issn.2095-3631.2017.06.010]
 DENG Xiaoxiang,LI Peng,DAI Chaofan,et al.Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter[J].High Power Converter Technology,2017,(06):48-51.[doi:10.13889/j.issn.2095-3631.2017.06.010]
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增强型GaN MOSFET 与Si MOSFET 在单相全桥逆变器中的性能比较()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年06期
页码:
48-51
栏目:
电力电子器件
出版日期:
2017-12-05

文章信息/Info

Title:
Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter
文章编号:
2095-3631(2017)06-0048-04
作者:
邓孝祥 1李 鹏1戴超凡2杨荣浩1
(1. 黑龙江科技大学,黑龙江哈尔滨 150022;2. 国网江苏省电力公司泗阳县供电公司,江苏 宿迁 223700)
Author(s):
DENG Xiaoxiang1 LI Peng1 DAI Chaofan2 YANG Ronghao1
(1.Heilongjiang University of Science and Technology, Harbin, Heilongjiang 150022, China; 2.State Grid, Jiangsu Electric Power Company, Siyang County Power Supply Company, Suqian, Jiangsu 223700, China)
关键词:
单相全桥逆变器宽禁带增强型GaN MOSFET开关损耗栅极驱动损耗
Keywords:
single-phase full-bridge inverter wide bandgap enhanced GaN MOSFET switching loss gate drive loss
分类号:
TN303
DOI:
10.13889/j.issn.2095-3631.2017.06.010
文献标志码:
A
摘要:
为分析宽禁带半导体器件GaN MOSFET 与Si MOSFET 栅极驱动损耗、开关损耗的成因及关联参数,利用单相全桥逆变拓扑结构搭建功率开关器件应用测试平台,对GaN MOSFET 和Si MOSFET 在不同开关频率及器件工作温度下的效率进行测试比较。实验结果显示,开关频率为50 kHz 和120 kHz 时,基于增强型GaN MOSFET 的逆变器比基于Si MOSFET 的效率分别高1.47% 和1.6%;40 ℃,50 ℃,60 ℃,70℃温度对比实验时,基于增强型GaN MOSFET 的逆变器效率比基于Si MOSFET 的分别高1.8%,1.9%,2.0% 和2.1%,表明开关频率递增或工作温度越高的工况下,增强型GaN MOSFET 高效性能越明显。
Abstract:
In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working efficiencies of GaN MOSFET and Si MOSFET at different switching frequencies and different temperatures were tested using the test platform. The experimental results show that the efficiecies of the inverter with enhanced GaN MOSFETs are respectively 1.47% and 1.6% higher than that of the inverter with Si MOSFETs at the switching frequencies of 50 kHz and 120 kHz . The efficiencies of the inverter with enhanced GaN MOSFETs are respectively 1.8%, 1.9%, 2.0% and 2.1% higher than that of the inverter with Si MOSFETs at different operating temperatures of 40 ℃ , 50 ℃ , 60 ℃ 70 ℃ . The results showed that the efficiency of enhanced GaN MOSFET is higher, with increasing switching frequency and higher working temperature.

参考文献/References:

[1]MILLAN J, GODIGNON P, PERPINA X A, et al. A Survey of Wide Bandgap Power Semiconductor Devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5):2155-2163.
[2] 王宇 . 一种双极性调制SPWM 逆变器的研究与设计[J]. 电力学报,2014,29(3):240-243.
WANG Y. A Research and Design of Inverter Based on Bipolar SPWM Modulation[J]. Journal of Electric Power,2014, 29(3):240-243.
[3]孟建辉,石新春,付超,等. 新型高效率两级式单相光伏并网逆变系统的研究与应用[J]. 电力系统保护与控制,2013, 41(20):89-90.
MENG J H, SHI X C, FU C, et al. Research and application of novel high efficiency two-stage single-phase photovoltaic grid-connected inverter system[J]. Power System Protection and Control, 2013,41(20):89-90.
[4]NGUYEN T T, AHMED A, THANG T V, et al. Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation [J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2445-2455.
[5]李艳,张雅静,黄波,等. Cascode 型GaN HEMT 输出伏安特性及其在单相逆变器中的应用研究[J]. 电工技术学报,2015, 30(14):298-300.
LI Y, ZHANG Y J, HUANG B, et al. Research on Output Volt-ampere Characteristics of Cascode GaN HEMT and Its Application in Single-phase Inverter[J]. Transactions of China Electrotechnical Society,2015, 30(14):298-300.
[6]International Rectifier. FDH45N50 器件手册[Z]. International Rectifier, 2008. [7]Transphorm. GS66502 器件手册[Z]. Transphorm, 2012.
[8]任小永, REUSCH D, 季澍, 等. 氮化镓功率晶体管三电平驱动技术[J]. 电工技术学报,2013,28(5):202-207.
REN X Y, REUSCH D, JI S,et al. Three-Level Driving Method for GaN Power Transistor[J]. Transactions of China Electrotechnical Society,2013, 28(5):202-207.
[9]CONRAD M, DE DONCKER R W. Avoiding reverse recovery effects in super junction MOSFET based half-bridges[C]//IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG). IEEE, 2015:1-5.
[10]YANG BO, LEE F C, ZHANG A J. LLC resonant converter for front end DC/DC conversion[C]//IEEE APEC. 2002:1108- 1112.
[11]NAKAJIMA A, TAKAO K, OHASHI H. GaN power transistor modeling for high-speed converter circuit design[J]. IEEE Transactions on Electron Devices. 2013, 60 (2):646-651.
[12]YANG B, LEE F C, ZHANG A J. LLC resonant converter for front end DC/DC conversion[C]//IEEE APEC. 2002, 2:1108-1112.
[13]DONG M, ELMES J, PEPER M. Investigation on inherently safe gate drive techniques for normally-on wide bandgap power semiconductor switching devices[C]//Energy Conversion Congress and Exposition, 2009:120-125.

备注/Memo

备注/Memo:
收稿日期:2017-09-20
作者简介:邓孝祥(1966-),男,教授,研究方向为电力电子与电力传动。
基金项目:中国煤炭工业协会指导性计划项目(MTKJ2016-367)
更新日期/Last Update: 2017-12-18