[1]朱 武,忻 力,李彦涌,等.三电平IGBT 变频器损耗分析及计算[J].控制与信息技术(原大功率变流技术),2017,(05):83-87.[doi:10.13889/j.issn.2095-3631.2017.05.015]
 ZHU Wu,XIN Li,LI Yanyong,et al.Loss Analysis and Calculation for Three-level IGBT Inverter[J].High Power Converter Technology,2017,(05):83-87.[doi:10.13889/j.issn.2095-3631.2017.05.015]
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三电平IGBT 变频器损耗分析及计算()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
83-87
栏目:
“IGBT联盟学术会议”专刊
出版日期:
2017-10-05

文章信息/Info

Title:
Loss Analysis and Calculation for Three-level IGBT Inverter
文章编号:
2095-3631(2017)05-0083-04
作者:
朱 武忻 力李彦涌张东辉
(中车株洲所电气技术与材料工程研究院,湖南株洲 412001)
Author(s):
ZHU Wu XIN Li LI Yanyong ZHANG Donghui
( CRRC ZIC Research Institute of Electrical Technology & Material Engineering, Zhuzhou, Hunan 412001, China )
关键词:
IGBT三电平变频器散热损耗计算结温保护
Keywords:
IGBT three-level inverter heat dissipation loss calculation junction temperature protection
分类号:
TM46;TN32
DOI:
10.13889/j.issn.2095-3631.2017.05.015
文献标志码:
A
摘要:
文章以三电平应用为例,对IGBT 器件工作过程中损耗的构成和影响因素进行分析,建立了一个适用于各种控制方式的三电平IGBT 变频器损耗计算模型,其以软件仿真数据或试验数据作为输入来计算三电平拓扑中每个功率器件的损耗功率,计算值和测量值的误差在2% 以内。利用该模型还可对前期产品设计进行仿真分析,精确计算系统损耗,并且根据器件损耗测试核对仿真的精确性,进而配置与之匹配的冷却系统,确保IGBT 器件工作结温不超过器件要求值,并避免冷却系统的过度设计。对于不同功率器件搭建的系统,均可以参考和借鉴该方法进
Abstract:
Taking three-level converter application as an example, this paper analysed the components and influence factors of heat loss of working IGBT, presented an approach to calculate the heat loss of IGBT in three-level converter by different control methods, used the simulation or testing data as input to obtain heat losses of each IGBT in a three-level topology converter, and obtained a result whose error is within 2%. Furthermore, this approach can also be applied to the product design on early stage for precise computation of heat losses. With this approach, it is more likely to choose a reasonable cooling system which can guarantee that junction temperature is below permitted values and a rational redundant capacity of cooling system at the same time. Precise calculation of heat losses of the system with other power devices may refer to this paper as well.

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备注/Memo

备注/Memo:
收稿日期:2017-08-14
作者简介:朱武(1987-),男,工程师,主要从事功率半导体器件应用研究工作。
更新日期/Last Update: 2017-10-09