[1]周飞宇,宁旭斌,Luther Ngwendson,等.基于增强型沟槽栅技术的高性能3 300 V IGBT[J].控制与信息技术,2017,(05):65-69.[doi:10.13889/j.issn.2095-3631.2017.05.011]
 ZHOU Feiyu,NING Xubin,Luther Ngwendson,et al.3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance[J].High Power Converter Technology,2017,(05):65-69.[doi:10.13889/j.issn.2095-3631.2017.05.011]
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基于增强型沟槽栅技术的高性能3 300 V IGBT()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
65-69
栏目:
“IGBT联盟学术会议”专刊
出版日期:
2017-10-05

文章信息/Info

Title:
3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance
文章编号:
2095-3631(2017)05-0065-05
作者:
周飞宇宁旭斌Luther Ngwendson肖 强Ian Deviny戴小平
(1. 新型功率半导体器件国家重点实验室,湖南株洲 412001;2. 株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
ZHOU Feiyu NING Xubin Luther Ngwendson XIAO Qiang Ian Deviny DAI Xiaoping
(1.State Key Laboratory of Advanced Power Semiconductor Device, Zhuzhou, Hunan 412001, China; 2.Zhuzhou CRRC Times Electric Co.,Ltd., Zhuzhou, Hunan 412001, China)
关键词:
绝缘栅双极晶体管(IGBT)增强型沟槽栅通态压降关断安全工作区功率密度
Keywords:
IGBT enhanced trench on-state voltage reverse bias safe operation area (RBSOA) power density
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2017.05.011
文献标志码:
A
摘要:
采用沟槽栅结构、软穿通(SPT)技术和载流子存储层技术研制出一款增强型沟槽栅型(TMOS+) 3 300 V IGBT 芯片,其具有更低通态压降、更高功率密度和更优的关断安全工作区性能。高温(Tj=150 ℃ ) 工况下,芯片的通态压降比相同电压等级增强型平面栅型(DMOS+)IGBT 的约低25%,并能安全关断11 倍额定电流;同等外形尺寸条件下,TMOS+ 型IGBT 模块的电流等级(1 800 A)比DMOS+ 型的提升了20%,可满足更高功率容量的应用需求。
Abstract:
It developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. Its on-state voltage (Tj=150 ℃ ) is 25% lower than that of 3 300 V planar enhanced double diffused metal oxide semiconductor (DMOS+) IGBT, and its reverse bias safe operation area (RBSOA) is robust with 11 times rated current turn-off capability. Hence, the rated current of the TMOS+ IGBT module is 20% increased than the conventional one with the same size, which has more benefit for higher power applications.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2017-07-16
作者简介:周飞宇(1986-),女,硕士研究生,工程师,主要从事高压IGBT 芯片产品的开发工作。
基金项目:国家科技重大专项02 专项(2015ZX02301)
更新日期/Last Update: 2017-10-09