[1]滕 渊,覃荣震,杨鑫著,等.负载电感对IGBT 关断测试的影响[J].控制与信息技术(原大功率变流技术),2017,(05):51-54.[doi:10.13889/j.issn.2095-3631.2017.05.008]
 TENG Yuan,QIN Rongzhen,YANG Xinzhu,et al.Influence of the Load Inductance on the Turn-off Test for IGBT[J].High Power Converter Technology,2017,(05):51-54.[doi:10.13889/j.issn.2095-3631.2017.05.008]
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负载电感对IGBT 关断测试的影响()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
51-54
栏目:
“IGBT联盟学术会议”专刊
出版日期:
2017-10-05

文章信息/Info

Title:
Influence of the Load Inductance on the Turn-off Test for IGBT
文章编号:
2095-3631(2017)05-0051-04
作者:
滕 渊覃荣震杨鑫著罗 湘肖 强
(1. 新型功率半导体器件国家重点实验室,湖南株洲 412001;2. 株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
TENG Yuan QIN Rongzhen YANG Xinzhu LUO Xiang XIAO Qiang
(1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou , Hunan 412001,China; 2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
IGBT关断特性负载电感
Keywords:
IGBT turn-off characteristic load inductance
分类号:
TN304.07
DOI:
10.13889/j.issn.2095-3631.2017.05.008
文献标志码:
A
摘要:
在IGBT 动态测试电路(箝位感性负载电路)中,负载电感的作用是提供一个近似恒定的电流源。通常认为,负载电感只是起续流作用,并不关注其取值对IGBT 关断参数的影响。文章通过测试与数值仿真发现,在一定范围内,IGBT 的关断参数随负载电感增大而增大,且不同类型的IGBT 关断参数对负载电感取值的敏感性不同;通过对器件进行物理层面的分析发现,负载电感会影响关断时的电压上升速率,进而影响关断时的空穴电流比例。
Abstract:
The load inductor in the IGBT dynamic test circuit (clamped inductive circuit) works as a current source. Therefore, the load inductance is considered to have no influence on the test results. In this paper, it is found that the IGBT turn-off parameters increase with the load inductance within limits, and this property is related to the device designs. With the analysis of device physics mechanism, it is found that the load inductance affects the voltage rise rate at turning-off, and thus affects the ratio of the hole current at turning-off.

参考文献/References:

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[2] PERPINA X, SERVIERE J F, JORDA X, et al. Over-current turnoff failure in high voltage IGBT modules under clamped inductive load[C]// 13th European Conference on Power Electronics and Applications, 2009:1-10.
[3] ANTONIOU M, LOPHITIS N, BAUER F, et al. Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors[J]. IEEE Electron Device Letters, 2015, 36(8):823- 825.
[4] NING T, YANG S H, PENG Z Y. Failure analysis of IGBT in intelligent power module[C]// 2013 IEEE International Conference on Applied Superconductivity and Electromagnetic Devices (ASEMD), 2013:225-228.
[5] TENG Y, TAN J, YU Q Q, et al. Analysis of the negative Miller capacitance during switching transients of IGBTs[C]//TENCON IEEE Region 10 Conference, 2015:1-4.
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备注/Memo

备注/Memo:
收稿日期:2017-07-18
作者简介:滕渊(1988-),男,博士,工程师,主要研究方向为 IGBT 芯片设计。
基金项目:国家能源局项目(NY201507)
更新日期/Last Update: 2017-10-09