[1]余 伟,罗海辉,邓江辉,等.大功率IGBT 器件并联均流研究[J].控制与信息技术(原大功率变流技术),2017,(05):46-50.[doi:10.13889/j.issn.2095-3631.2017.05.007]
 YU Wei,LUO Haihui,DENG Jianghui,et al.Research on Internal Current Sharing of High-power IGBTs[J].High Power Converter Technology,2017,(05):46-50.[doi:10.13889/j.issn.2095-3631.2017.05.007]
点击复制

大功率IGBT 器件并联均流研究()
分享到:

《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
46-50
栏目:
“IGBT联盟学术会议”专刊
出版日期:
2017-10-05

文章信息/Info

Title:
Research on Internal Current Sharing of High-power IGBTs
文章编号:
2095-3631(2017)05-0046-05
作者:
余 伟罗海辉邓江辉周望君江普生吴煜东
(1. 新型功率半导体器件国家重点实验室,湖南株洲 412001;2. 株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
YU WeiLUO HaihuiDENG JianghuiZHOU WangjunJIANG PushengWU Yudong
(1.State Κey Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001, China; 2.Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
IGBT 并联并联均流IGBT 芯片参数 寄生参数
Keywords:
IGBT parallel current sharing IGBT chip parameter parasitic parameter
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2017.05.007
文献标志码:
A
摘要:
为提升器件电流等级,大功率IGBT 往往由多个芯片与子单元并联组成。当芯片与子单元并联时,有效控制器件内部的均流效果非常重要。文章分析了寄生电感对器件均流的影响,并通过理论推导分析了芯片参数对静态均流的影响,最后通过仿真和实验验证了芯片参数对动态均流的影响。结果表明,主回路寄生参数的不对称对均流的影响大于芯片参数差异的,而两者对开通均流的影响又都大于对关断均流的影响。
Abstract:
In order to increase the rating current level of device, high power IGBT is often composed of multiple chips and subelements in parallel, and in this case, how to effectively control the current sharing within device is very important. It analysed the important influence of stray inductance on IGBTs internal current sharing by experimental research, deduced and analyzed theoretically the influence of chip parameters on static current sharing, and verified the influence of chip parameters on dynamic current sharing by experiment and simulation. The results showed that the influence of the asymmetry of the parasitic parameters on current sharing is greater than that of chip parameters, and the influence of both on turning-on current sharing is greater than that of the turning-off.

参考文献/References:

[1]李华,杨光,杨涛,等. 6.5 kV 高压IGBT 的并联应用研究[J]. 机车电传动,2011(4):14-16.
 LI H,YANG G,YANG T,et al. Application Research on Parallel-using of 6.5 kV High-voltage IGBT [J]. Electric Drive for Locomotives, 2011(4):14-16.
[2] 张晋芳,梁海刚,刘志敏. 4500V 高压大电流IGBT 并联应用研究[J]. 铁道机车与动车,2014(6):6-8.
[3] WU R, SMIRNOVA L, WANG H, et al. Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules[C]// International Conference on Power Electronics and Ecce Asia. Seoul, South Korea :IEEE, 2015:850-856.
[4]忻兰苑,孙康康,龚喆,等. 功率组件IGBT 并联均流设计[J]. 大功率变流技术,2017(1):18-23.
XIN L Y, SUN K K, GONG Z, et al. Current Balancing Design of Paralleled-IGBT in Power Assembly[J]. High Power Converter Technology, 2017(1):18-23.
[5]SASAKI M, NISHIO H, SHORTEN A, et al. Current balancing control for parallel connected IGBTs using programmable gate driver output resistance[C]// International Symposium on Power Semiconductor Devices and ICS. Kanazawa, Japan :IEEE, 2014:65-68.
[6]耿浩杰.DC-DC 变换器中IGBT 并联不均流及开关损耗问题研究[J]. 机电信息,2013(15):34-35.
[7]凌晨,胡安,唐勇.IGBT 并联动态不均流温度特性研究[J]. 电力电子技术,2011(11):121-123.
LING C,HU A,TANG Y. Research on Temperature Characteristic of IGBT Parallel Connection Dynamic Current Imbalance[J]. Power Electronics,2011(11):121-123.
[8]张成,孙驰,马伟明,等. 基于电路拓扑的IGBT 并联均流方法 [J]. 高电压技术,2013, 39(2):505-512.
 ZHANG C, SUN C, MA W M, et al. Paralleling Current Sharing Method of Parallel IGBTs Based on Circuit Topology[J]. High Voltage Engineering,2013, 39(2):505-512.
[9]张丹,牛勇,陈宏,等. 基于IGBT 并联技术的辅助变流模块设计[ J ]. 电子世界,2016(8):132-135.
[10]Olivier Garcia. Driving IGBTs in Parallel is Plug-and-Play[J]. Bodo,s Power Systems, 2012(8):30-35.
[11]Serge Bontemps. Parallel Connection of IGBT and MOSFET Power Modules[S]. Merignac, France: Advanced Power Technology Europe, 2004.
[12]杨笑宇,刘伟增,马超群,等. 交流铜排结构对功率模块并联均流的影响[J]. 电力电子技术,2013, 47(5):100-103.
YANG X Y, LIU W Z, MA C Q, et al. Influence of AC Copper Bar Structure on Current Sharing of Paralleled IGBT Modules[J]. Power Electronics, 2013, 47(5):100-103.
[13]PEREZDELGADO R, VELASCOQUESADA G, ROMANLUMBRERAS M. Current Sharing Control Strategy for IGBTs Connected in Parallel[J]. Journal of Power Electronics, 2016, 16(2):769-777.

相似文献/References:

[1]周帅,张小勇,黄芳军,等.一种动车组充电机的设计[J].控制与信息技术(原大功率变流技术),2014,(01):13.[doi:10.13889/j.issn.2095-3631.2014.01.006]
 ZHOU Shuai,ZHANG Xiao-yong,HUANG Fang-jun,et al.Design of a Charger for EMU[J].High Power Converter Technology,2014,(05):13.[doi:10.13889/j.issn.2095-3631.2014.01.006]
[2]忻兰苑,孙康康,龚 喆,等.功率组件IGBT 并联均流设计[J].控制与信息技术(原大功率变流技术),2017,(01):18.[doi:10.13889/j.issn.2095-3631.2017.01.004]
 XIN Lanyuan,SUN Kangkang,GONG Zhe,et al.Current Balancing Design of Paralleled-IGBT in Power Assembly[J].High Power Converter Technology,2017,(05):18.[doi:10.13889/j.issn.2095-3631.2017.01.004]
[3]吴建雄,张洪浩,陈艺峰.多IGBT 并联模块的交直流母排设计研究[J].控制与信息技术(原大功率变流技术),2017,(02):27.[doi:10.13889/j.issn.2095-3631.2017.02.005]
 WU Jianxiong,ZHANG Honghao,CHEN Yifeng.Study of DC Bus-bar and AC Bus-bar Design for Multi Paralleled-IGBT Module[J].High Power Converter Technology,2017,(05):27.[doi:10.13889/j.issn.2095-3631.2017.02.005]
[4]祁善军,翁星方,宋文娟,等.大功率IGBT模块并联均流特性研究[J].控制与信息技术(原大功率变流技术),2011,(06):10.[doi:10.13889/j.issn.2095-3631.2011.06.005]
 QI Shan-jun,WENG Xing-fang,SONG Wen-juan,et al.Research on Even Flow of High-power IGBT Module in Parallel[J].High Power Converter Technology,2011,(05):10.[doi:10.13889/j.issn.2095-3631.2011.06.005]
[5]余 伟,罗海辉,邓江辉,等. 大功率IGBT 器件并联均流研究[J].控制与信息技术(原大功率变流技术),2017,(05):46.[doi:10.13889/j.issn.2095-3631.2017.05.007]
 YU Wei,LUO Haihui,DENG Jianghui,et al. Research on Internal Current Sharing of High-power IGBTs[J].High Power Converter Technology,2017,(05):46.[doi:10.13889/j.issn.2095-3631.2017.05.007]

备注/Memo

备注/Memo:
收稿日期:2017-08-25
作者简介:余伟(1984-),男,工程师,研究方向为IGBT 测试与应用。
基金项目:国家科技重大专项02 专项(2015ZX02301)
更新日期/Last Update: 2017-10-09