[1]杨 飞,等.IGBT 短路关断坚固性仿真研究[J].控制与信息技术(原大功率变流技术),2017,(05):42-45.[doi:10.13889/j.issn.2095-3631.2017.05.006]
 YANG Fei,ZHU Yangjun.Simulation Investigation on the Ruggedness of IGBT During its Short-circuit Turn-off[J].High Power Converter Technology,2017,(05):42-45.[doi:10.13889/j.issn.2095-3631.2017.05.006]
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IGBT 短路关断坚固性仿真研究()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
42-45
栏目:
“IGBT联盟学术会议”专刊
出版日期:
2017-10-05

文章信息/Info

Title:
Simulation Investigation on the Ruggedness of IGBT During its Short-circuit Turn-off
文章编号:
2095-3631(2017)05-0042-04
作者:
杨 飞1 2朱阳军1 3
(1. 中国科学院微电子研究所,北京 100029;2. 中国科学院大学,北京 100049;3. 北京芯长征科技有限公司,北京 100026)
Author(s):
YANG Fei 12 ZHU Yangjun 13
(1.Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China; 3. Marching Power Technology Co., Ltd., Beijing 100026, China)
关键词:
绝缘栅双极性晶体管短路关断坚固性
Keywords:
insulated gate bipolar transistor (IGBT) short-circuit turn-off ruggedness
分类号:
TN304.07
DOI:
10.13889/j.issn.2095-3631.2017.05.006
文献标志码:
A
摘要:
随着IGBT 芯片越来越薄和电流增益越来越低,电流集中效应在IGBT 短路关断过程中变得更显著,尤其是在自夹挤模式下。为了提高IGBT 短路关断过程中的坚固性,文章通过对称的多元胞电热耦合仿真的方式研究了IGBT 主要的器件参数对IGBT 在短路关断过程中,尤其是在自夹挤模式下的坚固性的影响。结果显示,有更高掺杂、更宽的漂移区、更低的饱和电流密度和更宽的元胞尺寸可以实现更高的短路关断坚固性;而且,存在使得短路关断坚固性最高的电流增益最优值。
Abstract:
As the chip thickness of IGBT becomes thinner and the current gain becomes lower, the current crowding effect becomes more pronounced during short-circuit turn-off, especially in the self-clamping mode (SCM). To further improve the ruggedness of IGBT during short-circuit turn-off, it focused on studying the influences of the major device parameters on the ruggedness of IGBT during shortcircuit turn-off, especially in the SCM via symmetrical multicell electrothermal simulations. The results show that wider drift region combined with higher doping concentration, lower saturation current and larger cell pitch can achieve higher ruggedness during shortcircuit turn-off. Besides, as the current gain increases, there exists the optimum value at which the ruggedness of IGBT during short-circuit turn-off is the highest.

参考文献/References:

[1]BASLER T, BHOJANI R, LUTZ J, et al. Dynamic self-clamping at short-circuit turn-off of high-voltage IGBTs[C]//2013 25th International Symposium on Power Semiconductor Devices & IC’s (ISPSD). Kanazawa, 2013:277-280.
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备注/Memo

备注/Memo:
收稿日期:2017-08-09
作者简介:杨飞(1991-),男,博士研究生,研究方向为功率半导体器件设计;朱阳军(1980-),男,博士,研究员,研究方向为功率半导体器件研制。
基金项目:国家自然科学基金项目( 51490681)
更新日期/Last Update: 2017-10-09