[1]Luther Ngwendson,朱春林,等.沟槽栅IGBT 结构参数设计与动、静态性能优化(英文)[J].控制与信息技术(原大功率变流技术),2017,(05):16-20.[doi:10.13889/j.issn.2095-3631.2017.05.002]
 Luther Ngwendson,Chunlin Zhu,Ian Deviny,et al.Influence of Device Design Parameters on Static and Dynamic Performances of Trench Gate IGBT[J].High Power Converter Technology,2017,(05):16-20.[doi:10.13889/j.issn.2095-3631.2017.05.002]
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沟槽栅IGBT 结构参数设计与动、静态性能优化(英文)()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
16-20
栏目:
“IGBT联盟学术会议”专刊
出版日期:
2017-10-05

文章信息/Info

Title:
Influence of Device Design Parameters on Static and Dynamic Performances of Trench Gate IGBT
文章编号:
2095-3631(2017)05-0016-05
作者:
Luther Ngwendson1 朱春林1 2 Ian Deviny1
(1. 丹尼克斯半导体,英国林肯 LN6 3LF;2. 新型功率半导体器件国家重点实验室,湖南株洲 412001)
Author(s):
Luther Ngwendson1 Chunlin Zhu 1 2 Ian Deviny1
( 1. Dynex Semiconductors, Lincoln, LN6 3LF, UK; 2. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001,China )
关键词:
绝缘栅双极晶体管设计参数沟槽栅软穿通
Keywords:
IGBT design parameter trench gate soft punch through
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2017.05.002
文献标志码:
A
摘要:
近年来,随着沟槽栅软穿通技术的发展,IGBT 的性能不断提升。沟槽栅IGBT 的动、静态性能与栅结构、载流子存储层、软穿通缓冲层等密切相关。在实际应用中,需根据不同的应用需求如低导通压降、低关断损耗或宽安全工作区性能等,对IGBT 的综合性能进行优化设计。本文研究了沟槽栅IGBT 的结构设计参数对器件性能的影响,并在此基础上探索了基于低电感应用条件的电动汽车IGBT 的参数设计。
Abstract:
Significant progress has been made by combining trench gate cell design and field stop (or SPT) buffer concept in modern IGBT technology. In this paper, we explored the different device design parameters that could be optimised to obtain best-in-class static and dynamic performance of trench gate IGBT in particular. This includes parameters such as active and dummy trench cell design, carrier injection enhancement, soft punch through, etc. It is shown that the parameter combination for optimisation will change depending on application needs such as low on-state voltage drop, low turn-off energy loss or ruggedness in terms of RBSOA and SCSOA. Additionally we investigated the design parameters necessary for best performance in low inductance circuits which are important in HEV/EV applications.

参考文献/References:

[1] KIMMER T, GRIEBL E. Trenchstop 5: A new application specific IGBT series[C]// Proc. PCIM Europe. Nuremberg, Germany, 2012: 120-127.
[2] WERBER D, HUNGER T, WISSEN M, et al. A 1 000 A 6.5 kV Power Module enabled by Reverse Conducting Trench Gate IGBT Technology[C]// Proc. PCIM Europe. Nuremberg, Germany, 2015: 351-358.
[3] CORVASCE C, ANDENNA M, MATTHIAS S, et al. 3.3 kV Hipak2 Module with Enhanced Trench (TSPT) IGBTs and FCE Diodes up to 1 800 A[C]// Proc. PCIM Europe. Nuremberg, Germany, 2016: 417-424.
[4] MORI M, OYAMA K, ARAI T, et al. Planar-Gate High- Conductivity IGBT (HiGT) With Hole-Barrier Layer[J]. IEEE Transactions on Electron Devices, 2007, 54(6):1515-1520.
[5] WOLTER F, ROESNER W, COTOROGEA M, et al. Multidimensional trade-off considerations of the 750 V micro pattern trench IGBT for electric drive train applications[C]//Proc. ISPSD’15. Hongkong, 2015:105-108.
[6] GEINZER T, BOEVING H, REITER T, et al. Value creation developing efficient 750 V IGBT and emitter controlled diode for automotive applications[C]//Proc. PCIM Europe. Nuremberg, Germany, 2015:19-21.
[7] JAEGER C, PHILIPPOU A, VE LLEI A, et al. A new sub-micron trench cell concept in ultrathin wafer technology for next Generation 1200 V IGBTs[C]// Proc. ISPSD’17. Sapporo, Japan, 2017: 69- 72.
[8] TANAKA M, NAJKAGAWA A. Conductivity Modulation in the Channel Inversion Layer of Very Narrow Mesa IGBT[C]// Proc. ISPSD’17. Sapporo, Japan, 2017: 61-64.
[9] DEVINY I, LUO H H, XIAO Q, et al. A Novel 1 700 V RETIGBT (Recessed Emitter Trench IGBT) Shows Record Low Vce(on), Enhanced Current Handling Capability and Short Circuit Robustness [C]//Proc. ISPSD’17. Sapporo, Japan, 2017: 147-150.
[10]VOBECKY J, RAHIMO M, KOPTA A, et al. Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT[C]// ISPSD’08. Orlando, USA, 2008:76-79.
[11]FELSL H P, NIEDERNOSTHEIDE F J,SCHULZE H J, et al. IGBT Field-Stop Design for good Short Circuit Ruggedness and a better Trade-off with Respect to Static and Dynamic Switching Characteristics[C]// Proc. ISPSD’17. Sapporo, Japan, 2017:143-146.
[12]BABURSKE R, NIEDERNOSTHEIDE F J,SCHULZE H J, et al. Low-inductive power systems to overcome short circuit ruggedness limits[C]// Proc. ISPSD’16. Prague, Czech Republic, 2016: 323-326.

相似文献/References:

[1]冷国庆,赵 哿,金 锐,等.高关断能力压接型IGBT 器件研制[J].控制与信息技术(原大功率变流技术),2017,(05):70.[doi:10.13889/j.issn.2095-3631.2017.05.012]
 LENG Guoqing,ZHAO Ge,JIN Rui,et al.Research on the Press-pack IGBT with High SCSOA[J].High Power Converter Technology,2017,(05):70.[doi:10.13889/j.issn.2095-3631.2017.05.012]

备注/Memo

备注/Memo:
收稿日期:2017-08-22
作者简介:Luther Ngwendson(1969-),男,博士,高级工程师,主要从事IGBT 器件设计和工艺集成工作。
更新日期/Last Update: 2017-10-09