[1]余 伟,罗海辉,邓江辉,等. 大功率IGBT 器件并联均流研究[J].控制与信息技术(原大功率变流技术),2017,(05):46-50.[doi:10.13889/j.issn.2095-3631.2017.05.007]
 YU Wei,LUO Haihui,DENG Jianghui,et al. Research on Internal Current Sharing of High-power IGBTs[J].High Power Converter Technology,2017,(05):46-50.[doi:10.13889/j.issn.2095-3631.2017.05.007]
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 大功率IGBT 器件并联均流研究()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年05期
页码:
46-50
栏目:
出版日期:
2017-10-05

文章信息/Info

Title:
 Research on Internal Current Sharing of High-power IGBTs
文章编号:
2095-3631(2017)05-0046-05
作者:
 余 伟罗海辉邓江辉周望君江普生吴煜东
 (1. 新型功率半导体器件国家重点实验室,湖南株洲 412001;2. 株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
 YU WeiLUO HaihuiDENG JianghuiZHOU WangjunJIANG PushengWU Yudong
 (1.State Κey Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001, China;2.Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
 IGBT 并联并联均流IGBT 芯片参数 寄生参数
Keywords:
 IGBT parallel current sharing IGBT chip parameter parasitic parameter
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2017.05.007
文献标志码:
A
摘要:
 为提升器件电流等级,大功率IGBT 往往由多个芯片与子单元并联组成。当芯片与子单元并联时,有效控制器件内部的均流效果非常重要。文章分析了寄生电感对器件均流的影响,并通过理论推导分析了芯片参数对静态均流的影响,最后通过仿真和实验验证了芯片参数对动态均流的影响。结果表明,主回路寄生参数的不对称对均流的影响大于芯片参数差异的,而两者对开通均流的影响又都大于对关断均流的影响。
Abstract:
 In order to increase the rating current level of device, high power IGBT is often composed of multiple chips and subelements in parallel, and in this case, how to effectively control the current sharing within device is very important. It analysed the important influence of stray inductance on IGBTs internal current sharing by experimental research, deduced and analyzed theoretically the influence of chip parameters on static current sharing, and verified the influence of chip parameters on dynamic current sharing by experiment and simulation. The results showed that the influence of the asymmetry of the parasitic parameters on current sharing is greater than that of chip parameters, and the influence of both on turning-on current sharing is greater than that of the turning-off.

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备注/Memo

备注/Memo:
 收稿日期:2017-08-25
作者简介:余伟(1984-),男,工程师,研究方向为IGBT 测试与应用。
基金项目:国家科技重大专项02 专项(2015ZX02301)
更新日期/Last Update: 2017-09-18