[1]忻兰苑,孙康康,龚 喆,等.功率组件IGBT 并联均流设计[J].控制与信息技术(原大功率变流技术),2017,(01):18-23.[doi:10.13889/j.issn.2095-3631.2017.01.004]
 XIN Lanyuan,SUN Kangkang,GONG Zhe,et al.Current Balancing Design of Paralleled-IGBT in Power Assembly[J].High Power Converter Technology,2017,(01):18-23.[doi:10.13889/j.issn.2095-3631.2017.01.004]
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功率组件IGBT 并联均流设计()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2017年01期
页码:
18-23
栏目:
变流与控制
出版日期:
2017-02-05

文章信息/Info

Title:
Current Balancing Design of Paralleled-IGBT in Power Assembly
文章编号:
2095-3631(2017)01-0018-06
作者:
忻兰苑12孙康康12龚 喆12陈燕平12唐龙谷12
(1. 新型功率半导体器件国家重点实验室, 湖南 株洲 412001;2. 株洲中车时代电气股份有限公司, 湖南 株洲 412001)
Author(s):
XIN Lanyuan 12 SUN Kangkang 12 GONG Zhe 12 CHEN Yanping 12 TANG Longgu 12
( 1.State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou,Hunan 412001,China; 2. Zhuzhou CRRC Times Electric Co.,Ltd., Zhuzhou,Hunan 412001,China )
关键词:
IGBT 并联功能组件静态均流动态均流
Keywords:
IGBT paralleling power assembly static current balance dynamic current balance
分类号:
TN6
DOI:
10.13889/j.issn.2095-3631.2017.01.004
文献标志码:
A
摘要:
介绍了IGBT 并联的几种不同形式,着重分析了器件直接并联不均流的影响因素及形成机理,从工程实践的角度在器件电性能参数、结温、驱动以及结构等多个方面给出了对应的设计要点,并通过仿真、双脉冲试验以及功率考核对此进行了验证。结果表明,采用该设计方法的组件具有优良的均流效果。
Abstract:
It introduced several different types of IGBT paralleling and mainly analyzed influence factors and forming mechanism of current unbalancing in direct IGBT paralleling. From the practical engineering point of view, corresponding design key points were raised on several aspects such as device electrical parameters, junction temperature, gate driver and mechanical structure etc., and they were verified by simulation, double-pulse test and power cycling test. The results show that the power assembly with this design has good current balancing effect.

参考文献/References:

[1] VOLKE A, HORNKAMP M. IGBT Modules——Technologies, Driver and Application[M].2nd edition. Munich: Infineon Technologies AG, 2012:46-55.
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[3] 王雪松,赵争鸣,袁立强,等. 应用于大容量变换器的 IGBT 并联技术[J]. 电工技术学报,2012,27(10):155-163. 
    WANG X S, ZHAO Z M, YUAN L Q, et al. Parallel Technique for IGBT Modules Applied in High-Power Converter[J]. Transactions of China Electrotechnical Society, 2012, 27(10):155-163.
[4] 吴郁,张万荣. 功率半导体器件——理论及应用[M]. 刘兴明 译. 北京:化学工业出版社,2005:257.
[5] 马伯乐,杨光,忻力. 大功率IGBT 直接并联应用技术研究[J]. 机车电传动,2014(1):11-15. 
    MA B L, YANG G, XIN L. Application Research on Parallel Using of High-power IGBT[J]. Electric Drive for Locomotives,2014(1): 11-15.
[6] 杨笑宇,刘伟增,马超群,等. 交流铜排结构对功率模块并联均流的影响[J]. 电力电子技术, 2013(5):100-103.
   YANG X Y, LIU W E, MA C Q, et al. Influence of AC Copper Bar Structure on Current Sharing of Paralleled IGBT Modules[J]. Power Electronics, 2013(5):100-103.

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备注/Memo

备注/Memo:
收稿日期:2016-11-08 
作者简介:忻兰苑(1984-),女,工程师,现从事 IGBT 器件驱动及应用技术、功率组件技术等设计开发工作。
更新日期/Last Update: 2017-02-28