[1]宁圃奇,李 磊,温旭辉,等.SiC MOSFET 和Si IGBT 的结温特性及结温监测方法研究[J].控制与信息技术(原大功率变流技术),2016,(05):65-70.[doi:10.13889/j.issn.2095-3631.2016.05.014]
 NING Puqi,LI Lei,WEN Xuhui,et al.Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT[J].High Power Converter Technology,2016,(05):65-70.[doi:10.13889/j.issn.2095-3631.2016.05.014]
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SiC MOSFET 和Si IGBT 的结温特性及结温监测方法研究()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年05期
页码:
65-70
栏目:
电力电子器件
出版日期:
2016-10-05

文章信息/Info

Title:
Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT
文章编号:
2095-3631(2016)05-0065-06
作者:
宁圃奇 123李 磊1234温旭辉123张 栋1234
(1. 北京电动车辆协同创新中心,北京 100081;2. 中国科学院电工研究所,北京 100190; 3. 中国科学院电力电子与电气驱动重点实验室(电工研究所),北京 100049;4. 中国科学院大学,北京 102209)
Author(s):
NING Puqi 123 LI Lei 1234 WEN Xuhui 123ZHANG Dong 1234
(1. Beijing Collaborative Innovation Center for Electric Vehicles, Beijing 100081, China; 2. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; 3. Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100049, China; 4. University of Chinese Academy of Sciences, Beijing 102209, China)
关键词:
SiC MOSFETSi IGBT导通压降开关时间结温监测
Keywords:
SiC MOSFET Si IGBT on-state voltage switching time junction temperature estimation
分类号:
TN386
DOI:
10.13889/j.issn.2095-3631.2016.05.014
文献标志码:
A
摘要:
为了研究结温对1 200 V SiC MOSFET 和Si IGBT 输出特性、漏电流、开关特性和器件损耗的影响,搭建了输出特性测试电路、漏电流测试电路和双脉冲测试电路,并针对SiC MOSFET 和Si IGBT 随结温变化的不同表现,提出了不同的结温监测方法。通过测试发现,SiC MOSFET 和Si IGBT 的导通压降和漏电流随结温升高而增大; Si IGBT 的开通损耗和关断损耗均随结温升高而增大,而SiC MOSFET 的开通损耗随结温升高先增大后减小,关断损耗随结温升高而增大;Si IGBT 的开关时间随结温变化而单调变化,而SiC MOSFET 的开关时间随结温变化没有明显的变化规律。
Abstract:
The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch characteristic and the loss. Based on the variable performances, different junction temperature estimations were proposed. The estimation indicated that the on-state voltage and leakage current of SiC MOSFET and Si IGBT would increase with the junction temperature rising. The same applied to turn-on loss and turn-off loss of Si IGBT. Meanwhile, turn-on loss of SiC MOSFET would increase at first and then decrease, but turn-off loss would increase with junction temperature rising. Switching time of Si IGBT varied monotonously, but no obvious regularity existed in switching time of SiC MOSFET.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2016-05-09
作者简介:宁圃奇(1982-),男,博士,研究员,从事功率器件特性建模及模块封装技术研究;李磊(1992-),男,博士研究生,从事功率器件特性测试及可靠性研究。
基金项目:国家自然科学基金青年基金项目(51507166);国家863 计划(2015AA034501)
更新日期/Last Update: 2016-11-01