[1]吴 佳,王弋宇,杨 程,等.高品质因数SiC PiN 二极管的研制[J].控制与信息技术(原大功率变流技术),2016,(05):55-58.[doi:10.13889/j.issn.2095-3631.2016.05.011]
 WU Jia,WANG Yiyu,YANG Cheng,et al.Development of High-FOM SiC PiN Diodes[J].High Power Converter Technology,2016,(05):55-58.[doi:10.13889/j.issn.2095-3631.2016.05.011]
点击复制

高品质因数SiC PiN 二极管的研制()
分享到:

《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年05期
页码:
55-58
栏目:
电力电子器件
出版日期:
2016-10-05

文章信息/Info

Title:
Development of High-FOM SiC PiN Diodes
文章编号:
2095-3631(2016)05-0055-04
作者:
吴 佳12王弋宇12杨 程12史晶晶12
( 1. 新型功率半导体器件国家重点实验室,湖南株洲 412001;2. 株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
WU Jia 12WANG Yiyu 12YANG Cheng 12SHI Jingjing 12
( 1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan 412001, China; 2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China )
关键词:
碳化硅 PiN 二极管品质因数刻蚀工艺欧姆接触
Keywords:
SiC PiN diode FOM(figure of merit) etching process ohmic contact process
分类号:
TN304.2+4
DOI:
10.13889/j.issn.2095-3631.2016.05.011
文献标志码:
A
摘要:
基于Silvaco 仿真得到3 300 V SiC PiN二极管器件优化结构,开展了SiC刻蚀工艺和欧姆接触工艺研发,制备出具有倾角为48°的缓变台面结构和比接触电阻率在10-5 Ω·cm2 量级的欧姆接触的SiC PiN 二极管。所研制出的PiN 器件最高反向阻断能力达到4 000 V,在100 A/cm2 的正向电流密度下正向导通压降为3.4 V。该器件的品质因数(FOM)达到2 461 MW/cm2,目前在国内处于领先水平。
Abstract:
Based on Silvaco simulations, it obtained an optimized structure design of 3 300 V SiC PiN diode and developed SiC etching process and ohmic contact process. SiC PiN diode with 48 ° slant angle of bevel mesa structure and 10-5 Ω·cm2 contact resistivity of metal/4H-SiC ohmic contact was fabricated. Blocking voltage of the SiC PiN diode is up to 4 000 V and its on-state voltage is 3.4 V with current conduction density of 100 A/cm2. FOM of the device is 2 461 MW/cm2, which is the leading level at home.

参考文献/References:

[1] 张波,邓小川,张有润,等. 宽禁带半导体SiC 功率器件发展现状及展望[J]. 中国电子科学院学报. 2009,4(2):111-118.
[2] SHUR M, RUMYANTSEV S, LEVINSHTEIN M, 等. 碳化硅半导体材料与器件[M]. 杨银堂,贾护军,段宝兴,译. 北京:电子工业出版社,2012:20-23.
[3] LUTZ J, SCHLANGENOTTO H, SCHEUERMANN U, 等. 功率半导体——原理、特性和可靠性[M]. 北京:机械工业出版社, 2009:132-134.
[4] FENG J M, SHEN H J, MA X H, et al. Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer[J]. Journal of Semiconductors, 2016, 37 (4):0440091-0440095.
[5] ZHANG F S, ZHANG Y M. Simulation and Fabrication of High- Voltage 4H-SiC PiN Diode with JTE[J].Chinese Journal of Computational Physics, 2011, 28(2):306-312.
[6] BALIGA B J. 功率半导体器件基础[M]. 北京:电子工业出版社,2013:57-59.
[7] NIWA H, SUDA J, KIMOTO T. Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes[C] //IEEE International Meeting for Future of Electron Devices, 2012: 1-2.
[8] HAN R, YANG Y T, FAN X Y. Microtrenching geometry of 6H-SiC plasma etching [J].Vacuum, 2009, 84(3):400-404.
[9] SCHRODER D K. Semi conduc tor ma t e r i a l and devi c e characterization[M]. Hoboken: John Wiley& Sons INC., 2006: 98-104.
[10] WU J, FURSIN L, LI Y, et al. 4.3 kV 4H-SiC merged PiN/ Schottky diodes[J]. Semiconductor Science and Technology, 2006, 21(21):987-991.

相似文献/References:

[1]郑昌伟,常桂钦,李诚瞻.1 700 V/1 600 A 高性能SiC 混合IGBT功率模块的研制[J].控制与信息技术(原大功率变流技术),2015,(05):43.[doi:10.13889/j.issn.2095-3631.2015.05.009]
 ZHENG Changwei,CHANG Guiqin,LI Chengzhan.Development of 1 700 V/1 600 A High Performance SiC Hybrid IGBT Power Module[J].High Power Converter Technology,2015,(05):43.[doi:10.13889/j.issn.2095-3631.2015.05.009]
[2]王 俊,张 渊,李宗鉴,等. SiC GTO 晶闸管技术现状及发展[J].控制与信息技术(原大功率变流技术),2016,(05):7.[doi:10.13889/j.issn.2095-3631.2016.05.100]
 WANG Jun,ZHANG Yuan,LI Zongjian,et al. Technology Status and Development of SiC GTO Thyristor[J].High Power Converter Technology,2016,(05):7.[doi:10.13889/j.issn.2095-3631.2016.05.100]
[3]漆 宇,李彦涌,胡家喜,等.SiC 功率器件应用现状及发展趋势[J].控制与信息技术(原大功率变流技术),2016,(05):1.[doi:10.13889/j.issn.2095-3631.2016.05.001]
 QI Yu,LI Yanyong,HU Jiaxi,et al.Application Status of SiC Power Device and Its Development Tendency[J].High Power Converter Technology,2016,(05):1.[doi:10.13889/j.issn.2095-3631.2016.05.001]
[4]刘学超,John Mookken,黄建立,等.基于高压SiC MOSFET 的高效谐振全桥变换器研究[J].控制与信息技术(原大功率变流技术),2016,(05):18.[doi:10.13889/j.issn.2095-3631.2016.05.004]
 Jimmy Liu,John Mookken,Kin Lap Wong,et al.Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET[J].High Power Converter Technology,2016,(05):18.[doi:10.13889/j.issn.2095-3631.2016.05.004]
[5]戴小平,等.全烧结型SiC 功率模块封装设计与研制[J].控制与信息技术(原大功率变流技术),2016,(05):36.[doi:10.13889/j.issn.2095-3631.2016.05.007]
 DAI Xiaoping,,et al.Packaging Consideration and Development for Fully Sintered SiC Power Module[J].High Power Converter Technology,2016,(05):36.[doi:10.13889/j.issn.2095-3631.2016.05.007]
[6]李诚瞻,常桂钦,彭勇殿,等.一种低感封装的1 200 V 混合碳化硅功率模块[J].控制与信息技术(原大功率变流技术),2016,(05):71.[doi:10.13889/j.issn.2095-3631.2016.05.015]
 LI Chengzhan,CHANG Guiqin,PENG Yongdian,et al.1 200 V Hybrid SiC Power Module with Low Stray Inductance[J].High Power Converter Technology,2016,(05):71.[doi:10.13889/j.issn.2095-3631.2016.05.015]

备注/Memo

备注/Memo:
收稿日期:2016-07-05
作者简介:吴佳(1989-),女,工程师,现从事SiC PiN 二极管研发工作。
基金项目:国家科技重大专项02 项(2013ZX02305003)
更新日期/Last Update: 2016-11-01