[1]王亚飞,戴小平,周 维.应用于半导体器件钝化的类金刚石膜仿真模型的建立[J].控制与信息技术(原大功率变流技术),2016,(04):34-37.[doi:10.13889/j.issn.2095-3631.2016.04.007]
 WANG Yafei,DAI Xiaoping,ZHOU Wei.Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation[J].High Power Converter Technology,2016,(04):34-37.[doi:10.13889/j.issn.2095-3631.2016.04.007]
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应用于半导体器件钝化的类金刚石膜仿真模型的建立()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年04期
页码:
34-37
栏目:
电力电子器件
出版日期:
2016-08-05

文章信息/Info

Title:
Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
文章编号:
2095-3631(2016)04-0034-04
作者:
王亚飞戴小平周 维
(株洲中车时代电气股份有限公司,湖南株洲 412001)
Author(s):
WANG Yafei DAI Xiaoping ZHOU Wei
(Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
半导体器件类金刚石膜钝化 Silvaco ATLAS仿真模型
Keywords:
semiconductor device diamond-like carbon passivation Silvaco ATLAS simulation model
分类号:
TN305;TG17
DOI:
10.13889/j.issn.2095-3631.2016.04.007
文献标志码:
A
摘要:
为建立类金刚石膜材料仿真模型,采用PECVD 法在石英及硅衬底沉积出适用于功率半导体器件钝化的类金刚石膜,借助光谱吸收法测量其禁带宽度,结合材料电特性、能带结构及其与衬底的相互作用,将材料在 Silvaco ATLAS 器件仿真系统中重现。结果表明,材料模型的电特性仿真数据与实验数据相关性达0.9 以上。该仿真模型可应用于优化类金刚石膜钝化工艺,研究类金刚石膜材料掺杂特性。
Abstract:
In order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its electrical characteristics, band structure and the interaction with substrate, the material was reproduced in Silvaco ATLAS device simulator. Results show that the correlation coefficient between electrical simulation data of the material model and the experimental data is above 0.9. This material modelling can be applied for improving the passivation process of diamond-like carbon film and investigating its doping characteristics.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2016-05-04
作者简介:王亚飞(1987-)男,主要从事功率半导体器件芯片仿真及芯片钝化工艺研发工作。
更新日期/Last Update: 2016-08-31