[1]窦泽春,刘国友,陈 俊,等. 大功率压接式IGBT 器件设计与关键技术[J].控制与信息技术(原大功率变流技术),2016,(02):21-25.[doi:10.13889/j.issn.2095-3631.2016.02.005]
 DOU Zechun,LIU Guoyou,CHEN Jun,et al. Design and Key Technologies of High-power Press-pack IGBT Device[J].High Power Converter Technology,2016,(02):21-25.[doi:10.13889/j.issn.2095-3631.2016.02.005]
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 大功率压接式IGBT 器件设计与关键技术()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2016年02期
页码:
21-25
栏目:
电力电子器件
出版日期:
2016-04-05

文章信息/Info

Title:
 Design and Key Technologies of High-power Press-pack IGBT Device
文章编号:
2095-3631(2016)02-0021-05
作者:
 窦泽春 1刘国友1陈 俊2黎小林2彭勇殿1李继鲁1
 (1. 株洲中车时代电气股份有限公司,湖南株洲 412001;2. 南方电网科学研究院有限责任公司,广东广州 510080)
Author(s):
 DOU Zechun1 LIU Guoyou1 CHEN Jun2 LI Xiaolin2 PENG Yongdian1 LI Jilu1
 (1. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China;
2. Electric Power Research Institute, CSG, Guangzhou, Guangdong 510080, China)
关键词:
 压接式IGBT绝缘耐压压力均衡热学设计失效短路
Keywords:
 press-pack IGBT insulation and withstand voltage even pressure distribution thermal design fail to short-circuit
分类号:
TN60
DOI:
10.13889/j.issn.2095-3631.2016.02.005
文献标志码:
A
摘要:
 介绍了大功率压接式IGBT 相比于传统焊接型器件所具有的技术优势,从器件设计层面分析了器件绝缘耐压失效机理,提出通过提升介质介电强度的方法进行绝缘性能优化的方案;分析了压力分布对器件性能的影响并提出多种解决方案;提出几种热学设计优化思路;针对失效短路问题,分析了其过程机理。最后阐述了银烧结、集成散热、SiC 等压接式器件技术发展趋势。
Abstract:
 It presented the advantages of high-power press-pack IGBT device with respect to conventional soldering device. In the aspect of device design, insulation and blocking failure mechanism were analyzed as well as optimized solution which increasing the dielectric strength of contacting media. Influence of pressure distribution was introduced along with several solutions, and several optimized thermal deign and fail to short-circuit mechanism were analyzed. In the end, silver sintering, integrated cooler and SiC press-pack were introduced as its future technical trends.

参考文献/References:

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[8]KNOERR M, SCHLETZ A. Power semiconductor joining through sintering of silver nanoparticles: Evaluation of Influence of Parameters Time, Temperature and Pressure on Density, Strength and Reliability[C]// CIPS. Nuremberg, 2010.
[9]张文亮,汤广福,查鲲鹏,等. 先进电力电子技术在智能电网中的应用[J]. 中国电机工程学报,2010, 30(4):1-7.
[10]金锐,于坤山,张朋,等. IGBT 器件的发展现状以及在智能电网中的应用[J]. 智能电网,2013,1(2):11-16.
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备注/Memo

备注/Memo:
 收稿日期:2016-01-22
作者简介:窦泽春(1985-),男,工程师,主要从事功率半导体IGBT 模块设计、封装工艺以及产品开发相关工作。
更新日期/Last Update: 2016-04-18