[1]郑昌伟,常桂钦,李诚瞻.1 700 V/1 600 A 高性能SiC 混合IGBT功率模块的研制[J].控制与信息技术(原大功率变流技术),2015,(05):43-48.[doi:10.13889/j.issn.2095-3631.2015.05.009]
 ZHENG Changwei,CHANG Guiqin,LI Chengzhan.Development of 1 700 V/1 600 A High Performance SiC Hybrid IGBT Power Module[J].High Power Converter Technology,2015,(05):43-48.[doi:10.13889/j.issn.2095-3631.2015.05.009]
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1 700 V/1 600 A 高性能SiC 混合IGBT功率模块的研制()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年05期
页码:
43-48
栏目:
电力电子器件
出版日期:
2015-10-20

文章信息/Info

Title:
Development of 1 700 V/1 600 A High Performance SiC Hybrid IGBT Power Module
文章编号:
2095-3631(2015)05-0043-06
作者:
郑昌伟12常桂钦12李诚瞻12
1. 株洲南车时代电气股份有限公司,
2. 电力电子器件湖南省重点实验室
Author(s):
ZHENG Changwei 12 CHANG Guiqin 12 LI Chengzhan 12
1. Zhuzhou CSR Times Electric Co., Ltd.,
2. Key Laboratory of Power Electronics of Hunan Province,2. Key Laboratory of Power Electronics of Hunan Province,
关键词:
碳化硅肖特基二极管IGBT混合功率模块
Keywords:
Silicon Carbide (SiC) Schottky barrier diode (SBD) IGBT hybrid power module
分类号:
TN389
DOI:
10.13889/j.issn.2095-3631.2015.05.009
文献标志码:
A
摘要:
设计并封装了一款1 700 V/1 600 A SiC 混合IGBT 功率模块,对模块进行了常规电学特性测试,并与全Si 功率模块进行了比较。由于SiC 肖特基二极管优异的反向恢复特性,使得模块的开关性能得到明显提升,有效降低了模块的能量损耗。通过优化模块结构及栅极串联电阻,进一步降低了模块的开关损耗,使SiC 混合模块比全Si IGBT 模块具有更加优越的性能。
Abstract:
It designed and packaged a 1 700 V/1 600 A hybrid power IGBT module. Common electrical characteristics were measured and compared with those of a similar all-Si power module. The superior reverse recovery performance of SiC-SBDs leads to an obvious promotion in the switching characteristics and a reduction in energy losses. A further reduction in switching losses can be obtained by optimizing the module structure and gate resistance in series, which shows the more advanced performance of SiC hybrid power module.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2014-11-20
作者简介:郑昌伟(1987-),男,工程师,主要从事SiC 器件设计及工艺研究。
更新日期/Last Update: 2016-02-02