[1]方 杰,彭勇殿,窦泽春,等.高压IGBT 模块中AlN 衬板的局部放电特性研究[J].控制与信息技术(原大功率变流技术),2015,(05):38-42.[doi:10.13889/j.issn.2095-3631.2015.05.008]
 FANG Jie,PENG Yongdian,DOU Zechun,et al.Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module[J].High Power Converter Technology,2015,(05):38-42.[doi:10.13889/j.issn.2095-3631.2015.05.008]
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高压IGBT 模块中AlN 衬板的局部放电特性研究()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年05期
页码:
38-42
栏目:
电力电子器件
出版日期:
2015-10-20

文章信息/Info

Title:
Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module
文章编号:
2095-3631(2015)05-0038-05
作者:
方 杰彭勇殿窦泽春常桂钦李继鲁李世平
株洲南车时代电气股份有限公司
Author(s):
FANG Jie PENG Yongdian DOU Zechun CHANG Guiqin LI Jilu LI Shiping
Zhuzhou CSR Times Electric Co., Ltd.
关键词:
IGBT 模块局部放电AlN 衬板绝缘性能有限元分析电场分布
Keywords:
IGBT module partial discharge AlN substrate insulation performance finite element analysis electric field distribution
分类号:
TN306
DOI:
10.13889/j.issn.2095-3631.2015.05.008
文献标志码:
A
摘要:
通过有限元法仿真分析了IGBT 模块中AlN 衬板静态电场的分布,并对AlN 衬板材料进行了局部放电评估试验。此外,进一步研究了长期的周期性热应力对IGBT 模块中AlN 衬板的局部放电特性的影响。
Abstract:
Finite element method was utilized to simulate static electric field distribution in AlN substrate of IGBT module, on which partial discharge experiment was performed. Furthermore, the effect of periodic thermal stress on partial discharge characteristic of AlN substrate in IGBT module was further analyzed.

参考文献/References:

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[3]Do M T, Auge J L, Lesaint O. Optical measurement of partial discharges in silicone gel under repetitive pulse voltage[C]//Proceedings of 2005 International Symposium on Electrical Insulating Materials, 2005(2):360-363.
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[5]Lebey T, Malec D, Dinculescu S. Partial discharges phenomenon in high voltage power modules[J]. IEEE Transactions on Dielectrics and Electrical Insulation, 2006, 13(4):810-819.
[6]IEC 1287 Electronic Power Converters[S]. 1995.
[7]IEC 61287 Railway Applications-Power Convertors Installed on Board Rolling Stock[S]. 2005.
[8]IEC 60270 High voltage test techniques–partial discharge measurements[S]. 2000.
[9]中国电器工业协会. GB/T 7354 局部放电测量[S]. 2003.

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备注/Memo

备注/Memo:
收稿日期:2014-12-11
作者简介:方杰(1987-),男,工程师,从事IGBT 模块封装技术的研究工作。
更新日期/Last Update: 2016-02-02