[1]黄建伟,杨鑫著,刘 根,等.沟槽栅 IGBT 关键技术研究[J].控制与信息技术,2015,(02):57-61.[doi:10.13889/j.issn.2095-3631.2015.02.012]
 HUANG Jianwei,YANG Xinzhu,LIU Gen,et al.Research on the Key Technology of Trench Gate IGBT[J].High Power Converter Technology,2015,(02):57-61.[doi:10.13889/j.issn.2095-3631.2015.02.012]
点击复制

沟槽栅 IGBT 关键技术研究()
分享到:

《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年02期
页码:
57-61
栏目:
电力电子器件
出版日期:
2015-04-05

文章信息/Info

Title:
Research on the Key Technology of Trench Gate IGBT
文章编号:
2095-3631(2015)02-0057-05
作者:
黄建伟杨鑫著刘 根罗海辉余 伟谭灿健
株洲南车时代电气股份有限公司
Author(s):
HUANG Jianwei YANG Xinzhu LIU Gen LUO HaihuiYU WeiTAN Canjian
Zhuzhou CSR Times Electric Co., Ltd.,
关键词:
沟槽栅IGBT沟槽刻蚀栅氧生长多晶硅填充
Keywords:
trench gate IGBT trench etch gate oxidation poly filling
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2015.02.012
文献标志码:
A
摘要:
与平面栅IGBT 相比,沟槽栅IGBT 能显著改善通态压降与关断能量的折衷关系,更适用于中低压高频应用领域。针对沟槽栅IGBT 技术的挑战(主要包含沟槽刻蚀、栅氧生长、沟槽多晶硅填充等),研究并开发了沟槽栅一系列关键工艺:形貌优良的沟槽槽型,质量完好的栅氧生长工艺以及具备优良均匀性的原位掺杂多晶硅填充工艺等。采用改进工艺后的沟槽栅IGBT 芯片具有良好的电学性能,展示出优异的栅氧特性,顺利通过了高温动、静态等多项测试,较平面栅IGBT 体现出压降和损耗优势。
Abstract:
Compared with planar IGBT, trench gate IGBT has obviously improved the balance between on-state loss and switching loss and is more suitable to be used in the low-medium voltage and high frequency application field. Aiming at the challenges of the trench gate process include the trench etch processing, gate oxidation, poly filling etc., it researched and developed a series of key processes of trench gate IGBT and then obtained good trench etch profile, an excellent gate oxidation method and good uniformity and integrality of poly filling by amorphous poly doping. With the improved process method, the trench gate IGBT chips had good electrical performances, especially on gate oxidation charactersistic. It passed both static and dynamic tests at high temperature, and reflected obvious advantages at Vceon and power loss when compared to planar IGBT.

参考文献/References:

[1]Jayant B B. Fundamentals of power semiconductor devices[M].New York:Springer,2008.
[2]Udrea F. IGBT:concept, state-of-the art technologies, and derivatives[C]//Short-course at 21st ISPSD. Barcelona,2009.
[3]罗海辉,黄建伟. 沟槽栅IGBT 深槽工艺研究[J]. 大功率变流技术,2013(2):12-16.
[4]Chang H R, Baliga B J , Kretchmer J W, et al. Insulated gate bipolar transistor (IGBT) with a trench gate structure[C]//IEEE Electron Devices Meeting. Vol.33. 1987:674-677.
[5]Miyashita S. U-series IGBT modules[J]. Fuji Electric Review,2005,51(2):43-47.
[6]刘国友,覃荣震. 大功率IGBT 技术现状及其发展趋势[Z].IGBT 专集,2014:12-18.
[7]Dewar S, Linder S, von Arx C, et al. Soft Punch Through (SPT) –Setting new Standards in 1200V IGBT[C]//PCIM. Nuremberg,2000.
[8]Lane J M, Bogart K H A, Klemens F P, et al. The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100)[J]. J. Vac. Scl. Technol., A, 2000, 18(5):2067-2079.
[9]Panda S, Wise R, Mosden A, et al. Effect of rare gas addition on deep trench silicon etch[J]. Microelectronic Engineering, 2004,75(3):275-284.
[10]Campbell S A. The Science and Engineering of Microelectronic Fabrication[M]. 2nd ed. New York:Oxford, 2001.
[11]van Zant P. Microchip Fabrication A Practical Guide to Semiconductor Processing[M]. 5th ed. New York:McGraw-Hill Professional, 2004.

相似文献/References:

[1]罗海辉,黄建伟,Ian Deviny,等.沟槽栅IGBT深槽工艺研究[J].控制与信息技术,2013,(02):8.[doi:10.13889/j.issn.2095-3631.2013.02.004]
 LUO Hai-hui,HUANG Jian-wei,DEVINY Ian,et al.Investigation of Deep Trench Process for Trench-gate IGBT[J].High Power Converter Technology,2013,(02):8.[doi:10.13889/j.issn.2095-3631.2013.02.004]

备注/Memo

备注/Memo:
收稿日期:2014-12-30
作者简介:黄建伟(1962-),男,高级工程师,主要从事IGBT/FRD等功率器件芯片开发与产业化等研究工作。
更新日期/Last Update: 2016-01-06