[1]Makan Chen,Raffael Schnell,Evgeny Tsyplakov,等.HiPak 6.5 kV IGBT 的开关特性及门极驱动电路对其影响[J].控制与信息技术(原大功率变流技术),2015,(02):30-34.[doi:10.13889/j.issn.2095-3631.2015.02.006]
 Makan Chen,Raffael Schnell,Evgeny Tsyplakov,et al.Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit[J].High Power Converter Technology,2015,(02):30-34.[doi:10.13889/j.issn.2095-3631.2015.02.006]
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HiPak 6.5 kV IGBT 的开关特性及门极驱动电路对其影响()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年02期
页码:
30-34
栏目:
变流与控制
出版日期:
2015-04-05

文章信息/Info

Title:
Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
文章编号:
2095-3631(2015)02-0030-05
作者:
Makan Chen1 Raffael Schnell1 Evgeny Tsyplakov1 Arnost Kopta1 Joerg Berner1 洪 鹏2 王 浩2 Sven Klaka1
1. ABB 瑞士有限公司半导体部,
2. ABB 中国有限公司半导体部,
Author(s):
Makan Chen1 Raffael Schnell1 Evgeny Tsyplakov1 Arnost Kopta1 Joerg Berner1 HONG Peng2 WANG Hao2 Sven Klaka1
1. ABB Switzerland Ltd, Semiconductors,
2. ABB (China) Ltd, Semiconductors,
关键词:
6 500 V IGBTSPT+反向恢复门极驱动di/dt峰值功率二类短路
Keywords:
6 500 V IGBT SPT+ reverse recovery gate driving di/dt peak power second type short-circuit (SCII)
分类号:
TN32
DOI:
10.13889/j.issn.2095-3631.2015.02.006
文献标志码:
A
摘要:
介绍了ABB 对HiPak 6500V/750A IGBT 模块反向恢复特性的研究,首创性地就di/dt 对二极管和与之反向并联的IGBT 的正、反向恢复特性的影响进行了研究;并分析了di/dt 对IGBT 模块的影响,可以确认di/dt 在其反向恢复过程中起重要作用,即当di/dt 过高时,IGBT 和二极管芯片会发生损坏, 并有可能随后导致变流器的桥臂间短路。文章指出IGBT 和门极驱动之间的优化匹配对确保安全工作十分重要,只有这样HiPak 模块的鲁棒性才能得以完全体现。
Abstract:
It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the impact on IGBT module was analyzed. It is confirmed that di/dt plays a critical role in the reverse recovery process, where damage can occur both to IGBT and diode chips at excessive di/dt, leading to possible subsequent short circuit failure between phase-legs of the converter. The importance of an optimised match between IGBT and gate driver to ensure safe operation and full exploitation of HiPak robustness is highlighted.

参考文献/References:

[1]Kopta A, Rahimo M, Schlapbach U, et al. High Voltage SPT+ HiPakModules Rated at 4 500 V[C]//Proc. PCIM’07, Nürnberg, 2007.
[2]Rahimo M, Kopta A, Linder S. Novel Enhanced-Planar IGBT Technology Rated up to 6.5 kV with Lower Losses and Higher SOA Capability[C]// Proc. ISPSD’06. Napoli, 2006.
[3]Kopta A, Rahimo M, Schlapbach U, et al. 6 500 V SPT+ HiPak Modules Rated at 750 A[C]// Proc. PCIM’08. Nuremberg.2008.
[4]Linder S. Power Semiconductors[M]. Swiss:EPFL Press,240.
[5]ABB. Applying fast recovery diodes[S/OL].2013-09-02[2014-11-23]http://www05.abb.com/global/scot/scot256.nsf/veritydisplay/12349ad9718fcdd6c125751b0028d418/$file/Applying%20fast%20recovery%20diodes_%205SYA%202064.pdf.
[6]ABB. IGBT Module 5SNA 0750G650300[S/OL].2014-01-03[2014-12-15]http://www08.abb.com/global/scot/scot256.nsf/veritydisplay/bfeb34b019a8d50383257ca700384dff/$file/5SNA%200750G650300_5SYA%201600-03%2001-2014.pdf.
[7]Infineon. Infineon Application Note[S/OL].[2014-11-23]http://www.infineon.com/dgdl/Infineon-Description_IGBT-ANv1.0-en.pdf?fileId=db3a30433f565836013f5ca72d4e29db.
[8]ABB. Mounting instructions for HiPak modules[S/OL].[2014-11-23]http://www08.abb.com/global/scot/scot256.nsf/veritydisplay/9fd1823d4700665d83257ca5003146d9/$file/Mounting%20Instructions%20for%20HiPak%20_5SYA%202039-06.pdf.
[9]Kopta A. Short-Circuit Ruggedness of High-Voltage IGBTs[D].Bremen:University of Bremen ,2010.

备注/Memo

备注/Memo:
收稿日期:2014-12-24 作者简介:Makan Chen(1963-),男,博士、剑桥大学博士后,高级技术销售专家,曾为ABB 集团研究院高温超导研究领域领先研究员,现主要从事大功率半导体的设计、制造和市场开发。
更新日期/Last Update: 2016-01-06