[1]陈芳林,吴煜东,张 明,等.逆导IGCT补偿型PNP隔离技术研究[J].控制与信息技术,2015,(01):31-35.[doi:10.13889/j.issn.2095-3631.2015.01.007]
 CHEN Fanglin,WU Yudong,ZHANG Ming,et al.Research on the Isolation Technology for Reverse Conducting IGCT[J].High Power Converter Technology,2015,(01):31-35.[doi:10.13889/j.issn.2095-3631.2015.01.007]
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逆导IGCT补偿型PNP隔离技术研究()
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《控制与信息技术》[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2015年01期
页码:
31-35
栏目:
电力电子器件
出版日期:
2015-02-05

文章信息/Info

Title:
Research on the Isolation Technology for Reverse Conducting IGCT
文章编号:
2095-3631(2015)01-0031-05
作者:
陈芳林吴煜东张 明唐龙谷陈勇民高建宁
株洲南车时代电气股份有限公司
Author(s):
CHEN Fanglin WU Yudong ZHANG MingTANG Longgu CHEN Yongmin GAO Jianning
Zhuzhou CSR Times Electric Co., Ltd.,
关键词:
IGCTGCT逆导FRD隔离
Keywords:
IGCT GCT reverse conduct FRD isolation
分类号:
TN34
DOI:
10.13889/j.issn.2095-3631.2015.01.007
文献标志码:
A
摘要:
逆导IGCT器件的关键技术在于实现GCT与FRD间的隔离。对比现有隔离技术,提出了一种补偿型横向PNP结隔离方法;经Silvaco仿真分析后,在4英寸与6英寸GCT芯片上开展了工艺和测试验证,结果表明该方法能有效提升隔离电压,并降低了隔离的设计与工艺难度。
Abstract:
Isolation between GCT and FRD is the key technology in reverse conducting IGCT (RC_IGCT) developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process experiment and certification test were carried out on RC_GCTs wafers with 4 "and 6" substrates. The results show that the new method can increase the isolation voltage and reduce the difficulties both in the design and process.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2014-11-23
作者简介:陈芳林(1977-),女,高级工程师,主要从事IGCT器件工艺的研究。
更新日期/Last Update: 2016-01-08