[1]邵云,史晶晶,李诚瞻,等.高性能碳化硅混合功率模块研制[J].控制与信息技术(原大功率变流技术),2013,(02):5-7.[doi:10.13889/j.issn.2095-3631.2013.02.003]
 SHAO Yun,SHI Jing-jing,LI Cheng-zhan,et al.Development of High Performance SiC Hybird Power Module[J].High Power Converter Technology,2013,(02):5-7.[doi:10.13889/j.issn.2095-3631.2013.02.003]
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高性能碳化硅混合功率模块研制()
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《控制与信息技术》(原《大功率变流技术》)[ISSN:2095-3631/CN:43-1486/U]

卷:
期数:
2013年02期
页码:
5-7
栏目:
电力电子器件与应用
出版日期:
2013-04-05

文章信息/Info

Title:
Development of High Performance SiC Hybird Power Module
文章编号:
2095-3631(2013)02-0005-03
作者:
邵云12史晶晶12李诚瞻12彭勇殿12
(1 . 电力电子器件湖南省重点实验室,湖南株洲412001;2 . 株洲南车时代电气股份有限公司,湖南株洲412001)
Author(s):
SHAO Yun12 SHI Jing-jing12 LI Cheng-zhan12 PENG Yong-dian12
(1. Key Laboratory of Power Electronics of Hunan Province, Zhuzhou, Hunan 412001, China; 2. Zhuzhou CSR Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
关键词:
SiC SBD IGBT混合功率模块能量损耗
Keywords:
SiC SBD IGBT hybrid power module energy loss
分类号:
TN7
DOI:
10.13889/j.issn.2095-3631.2013.02.003
文献标志码:
A
摘要:
报道了一种基于自主封装技术的高性能、高效率碳化硅(SiC)混合功率模块,该功率模块的反向阻断电压为1 200 V,正向导通电流为480 A。动态测试表明,其峰值反向恢复电流Irr 仅为-115 A,关断延迟时间 td(off)为3.36μs,关断能量损耗Eoff 为296.82 mJ,开通延迟时间td(on)仅为0.66μs,开通能量损耗Eon 仅为242.27 mJ,输出功率可达到百千瓦级别。与传统的硅基IGBT模块相比,该碳化硅混合功率模块大大降低了模块的能量损耗。
Abstract:
A high performance and high efficiency SiC hybrid power module with our independently designed package technique is proposed. The reverse blocking voltage of the hybrid module is 1 200 V and the forward current is 480 A. The dynamic characteristic of the SiC hybrid module has been tested, and the results show that the reverse recovery peak current Irr is only -115 A, the turn off delay time td(off) is 3.36μs, the turn-off energy loss Eoff is 296.82 mJ, the turn-on delay time td(on) is 0.66μs, and the turn-on energy loss Eon is 242.27 mJ. Output power of the SiC module will reach to hundreds of kilowatt level. Comparing with conventional Si IGBT power module, SiC hybrid power module will reduce the energy loss greatly.

参考文献/References:

[1] Hesam M, Subhashish B, Sei-Hyung R,et al. Design Comparison of 6.5 kV Si-IGBT, 6.5kV SiC JBS Diode, and 10 kV SiC MOSFETs in Megawatt Converters for Shipboard Power System[C]//IEEE ESTS, 2011:248-253.
 [2] Wesley T C, Dimeji I, Damian U, et al. Development of a 15 kV Bridge Rectifier Module Using 4H-SiC Junction-barrier Schottky Diodes[J]. IEEE Transactions on Dielectrics and Electrical Insulation, 2011, 18(4):1137-1142.
 [3] Michael J P, Wayne J R, Autry T, et al. Silicon Carbide Power Modules for High-Temperature Applications[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2012, 2(2): 208-216.
 [4] Ning Puqi, Wang Fred, Ngo Khai D T. High-Temperature SiC Power Module Electrical Evaluation Procedure[J]. IEEE Transactions on Power Electonics, 2011, 26(11): 3079-3083.
 [5] Chinthavali1 M S, Tolbert1 L M, Zhang Hui, et al. High Power SiC Modules for HEVs and PHEVs[C]//2010 International Power Electronics Conference, 2010: 1842-1848.
 [6] Parker-Allotey N, Alatise O, Hamilton D, et al. Conduction and Switching Loss Comparison Between an IGBT/Si-PiN Diode Pair and an IGBT/SiC-Schottky Diode Pair[C]// 2011 2nd IEEE PES International Conference on Innovative Smart Grid Technologies (ISGT Europe), 2011:1-6.

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备注/Memo

备注/Memo:
收稿日期:2013- 02- 12
作者简介:邵云(1 9 7 4- ),男,工程师,长期从事大功率半导体器件研究与开发工作。
更新日期/Last Update: 2016-09-09